公开(公告)号：US5089872A

公开(公告)日：1992-02-18

申请号：US515589

申请日：1990-04-27

申请人： Mehmet Ozturk ,  Jimmie Wortman ,  Douglas Grider

发明人： Mehmet Ozturk ,  Jimmie Wortman ,  Douglas Grider

IPC分类号： H01L21/285 ,  H01L29/423 ,  H01L29/45

CPC分类号： H01L29/456 ,  H01L21/28525 ,  H01L29/41783 ,  H01L29/78 ,  H01L2924/0002

摘要： The invention is a method of selectively forming contacts on ultra shallow source and drain junctions. The method comprises forming a gate structure that defines a gate on a silicon substrate, portions of which are covered with a layer of silicon dioxide while the portions adjacent the gate form a silicon surface. The gate structure includes a surface material upon which germanium will not deposit at a temperature that is otherwise high enough to cause germanium to deposit from a germanium containing gas onto a silicon surface, but that is lower than the temperature at which germanium will deposit on the gate surface material. A source and drain are formed in the silicon substrate in the portions adjacent the gate by adding dopant atoms and in which the source and drain are separated by an active region of the silicon substrate defined by the gate structure. The substrate is then exposed to a germanium containing gas at a temperature high enough to cause the germanium to deposit from the germanium containing gas into the silicon surface but lower than the temperature at which the germanium will deposit on the gate structure surface material. The result is self-aligned germanium contacts to the source and the drain. The method can further comprise selectively depositing a metal on the germanium and annealing the deposit to form a germanide compound from the reaction between the deposited germanium and the deposited metal.

摘要翻译： 本发明是在超浅源极和漏极结上选择性地形成接触的方法。 该方法包括形成限定硅衬底上的栅极的栅极结构，其一部分被二氧化硅层覆盖，而与栅极相邻的部分形成硅表面。 栅极结构包括表面材料，锗不会在其上高度足够沉积以使锗从含锗气体沉积到硅表面上的温度沉积，但是低于锗沉积在硅表面上的温度 门表面材料。 源极和漏极通过添加掺杂剂原子在与栅极相邻的部分中的硅衬底中形成，其中源极和漏极由栅极结构限定的硅衬底的有源区域分开。 然后将衬底在足够高的温度下暴露于含锗气体，以使锗从含锗气体沉积到硅表面中，但低于锗将沉积在栅极结构表面材料上的温度。 结果是自对准的锗接触源和漏极。 该方法还可以包括选择性地在锗上沉积金属并退火沉积物以从沉积的锗和沉积的金属之间的反应形成锗化合物。

公开(公告)号：US5162246A

公开(公告)日：1992-11-10

申请号：US790230

申请日：1991-11-08

申请人： Mehmet Ozturk ,  Jimmie Wortman ,  Douglas Grider

发明人： Mehmet Ozturk ,  Jimmie Wortman ,  Douglas Grider

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/336

CPC分类号： H01L29/78 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/28525 ,  H01L29/41783 ,  H01L29/66477

摘要： The invention is a method of selectively forming contacts on ultra shallow source and drain junctions. The method comprises forming a gate structure that defines a gate on a silicon substrate, portions of which are covered with a layer of silicon dioxide while the portions adjacent the gate form a silicon surface. The gate structure includes a surface material upon which germanium will not deposit at a temperature that is otherwise high enough to cause germanium to deposit from a germanium containing gas onto a silicon surface, but that is lower than the temperature at which germanium will deposit on the gate surface material. A source and drain are formed in the silicon substrate in the portions adjacent the gate by adding dopant atoms and in which the source and drain are separated by an active region of the silicon substrate defined by the gate structure. The substrate is then exposed to a germanium containing gas at a temperature high enough to cause the germanium to deposit from the germanium containing gas onto the silicon surface but lower than the temperature at which the germanium will deposit on the gate structure surface material. The result is self-aligned germanium contacts to the source and the drain. The method can further comprise selectively depositing a metal on the germanium and annealing the deposit to form a germanide compound from the reaction between the deposited germanium and the deposited metal.

摘要翻译： 本发明是在超浅源极和漏极结上选择性地形成接触的方法。 该方法包括形成限定硅衬底上的栅极的栅极结构，其一部分被二氧化硅层覆盖，而与栅极相邻的部分形成硅表面。 栅极结构包括表面材料，锗不会在其上高度足够沉积以使锗从含锗气体沉积到硅表面上的温度沉积，但是低于锗沉积在硅表面上的温度 门表面材料。 源极和漏极通过添加掺杂剂原子在与栅极相邻的部分中的硅衬底中形成，其中源极和漏极由栅极结构限定的硅衬底的有源区域分开。 然后将衬底在足够高的温度下暴露于含锗气体，以使锗从含锗气体沉积到硅表面上，但低于锗将沉积在栅极结构表面材料上的温度。 结果是自对准的锗接触源和漏极。 该方法还可以包括选择性地在锗上沉积金属并退火沉积物以从沉积的锗和沉积的金属之间的反应形成锗化合物。

公开(公告)号：US5250452A

公开(公告)日：1993-10-05

申请号：US717631

申请日：1991-06-19

申请人： Mehmet Ozturk ,  Jimmie Wortman

发明人： Mehmet Ozturk ,  Jimmie Wortman

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L21/441

CPC分类号： H01L29/4925 ,  H01L21/2807 ,  Y10S148/059 ,  Y10S148/105

摘要： The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the characteristics of semiconductor device structure that the deposition of polycrystalline silicon would otherwise potentially cause. The polycrystalline layer is then exposed to a germanium containing gas at a temperature below the temperature at which germanium will deposit on silicon dioxide alone while preventing native growth of silicon dioxide on the polycrystalline silicon layer, and for a time sufficient for a desired thickness of polycrystalline germanium to be deposited on the layer of polycrystalline silicon.

摘要翻译： 本发明是一种在二氧化硅衬底上沉积多晶硅层的方法，直到多晶硅层足够厚以支持其上的锗沉积，但是同时足够薄以基本上避免对半导体器件的特性的有害影响 多晶硅的沉积否则可能导致的结构。 然后将多晶层暴露于含锗气体的温度，该温度低于锗将单独沉积在二氧化硅上的温度，同时防止二氧化硅在多晶硅层上的天然生长，并且足以达到期望厚度的多晶 锗沉积在多晶硅层上。

公开(公告)号：US5101247A

公开(公告)日：1992-03-31

申请号：US515595

申请日：1990-04-27

申请人： Mehmet Ozturk ,  Jimmie Wortman

发明人： Mehmet Ozturk ,  Jimmie Wortman

IPC分类号： H01L21/28 ,  H01L29/49

CPC分类号： H01L29/4925 ,  H01L21/2807

摘要： The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the characteristics of semiconductor device structure that the deposition of polycrystalline silicon would otherwise potentially cause. The polycrystalline layer is then exposed to a germanium containing gas at a temperature below the temperature at which germanium will deposit on silicon dioxide alone while preventing native growth of silicon dioxide on the polycrystalline silicon layer, and for a time sufficient for a desired thickness of polycrystalline germanium to be deposited on the layer of polycrystalline silicon.

摘要翻译： 本发明是一种在二氧化硅衬底上沉积多晶硅层的方法，直到多晶硅层足够厚以支持其上的锗沉积，但是同时足够薄以基本上避免对半导体器件的特性的有害影响 多晶硅的沉积否则可能导致的结构。 然后将多晶层暴露于含锗气体的温度，该温度低于锗将单独沉积在二氧化硅上的温度，同时防止二氧化硅在多晶硅层上的天然生长，并且足以达到期望厚度的多晶 锗沉积在多晶硅层上。