公开(公告)号：US06514857B1

公开(公告)日：2003-02-04

申请号：US09788164

申请日：2001-02-16

申请人： Mehul B. Naik ,  Tim Weidman ,  Dian Sugiarto ,  Allen Zhao

发明人： Mehul B. Naik ,  Tim Weidman ,  Dian Sugiarto ,  Allen Zhao

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/3121 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1021 ,  Y10S438/942

摘要： A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.

公开(公告)号：US06825562B2

公开(公告)日：2004-11-30

申请号：US10290637

申请日：2002-11-08

申请人： Mehul B. Naik ,  Tim Weidman ,  Dian Sugiarto ,  Allen Zhao

发明人： Mehul B. Naik ,  Tim Weidman ,  Dian Sugiarto ,  Allen Zhao

IPC分类号： H01L2348

CPC分类号： H01L21/31144 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/3121 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1021 ,  Y10S438/942

摘要： A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.

摘要翻译： 一种镶嵌结构及其制造方法，其包含相当低的介电常数材料（例如，k小于3.8）。 使用诸如等离子体聚合甲基硅烷（PPMS）的硅基感光材料来形成含有低k材料的单镶嵌和双镶嵌结构。 在形成镶嵌结构的制造过程中，将硅基感光材料用作硬掩模和/或蚀刻停止物。

公开(公告)号：US06204168B1

公开(公告)日：2001-03-20

申请号：US09017350

申请日：1998-02-02

申请人： Mehul B. Naik ,  Tim Weidman ,  Dian Sugiarto ,  Allen Zhao

发明人： Mehul B. Naik ,  Tim Weidman ,  Dian Sugiarto ,  Allen Zhao

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/3121 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1021 ,  Y10S438/942

摘要： A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.

摘要翻译： 一种镶嵌结构及其制造方法，其包含相当低的介电常数材料（例如，k小于3.8）。 使用诸如等离子体聚合甲基硅烷（PPMS）的硅基感光材料来形成含有低k材料的单镶嵌和双镶嵌结构。 在形成镶嵌结构的制造过程中，将硅基感光材料用作硬掩模和/或蚀刻停止物。