公开(公告)号：US11910726B2

公开(公告)日：2024-02-20

申请号：US18016338

申请日：2022-02-25

Applicant: MetOx Technologies, Inc.

Inventor： Shahab Khandan ,  Nagaraja Shashidhar ,  Mikhail Novozhilov

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/54 ,  H10N60/01 ,  C23C16/46

CPC classification number: H10N60/0464 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/52 ,  C23C16/545

Abstract: A vapor deposition reactor apparatus, systems and methods for deposition of thin films, particularly high-temperature superconducting (HTS) coated conductors, utilize multi-sided susceptors and susceptor pairs for increased production throughput. The reactors may also be configured in multi-stack arrangements of the susceptors within a single reactor chamber for additional throughput gains.