公开(公告)号：US06858455B2

公开(公告)日：2005-02-22

申请号：US10155841

申请日：2002-05-24

申请人： Michael A. Guillom ,  Michael L. Simpson ,  Vladimir I. Merkulov ,  Anatoli V. Melechko ,  Douglas H. Lowndes

发明人： Michael A. Guillom ,  Michael L. Simpson ,  Vladimir I. Merkulov ,  Anatoli V. Melechko ,  Douglas H. Lowndes

IPC分类号： B81C1/00 ,  H01J9/02 ,  H01L21/00

CPC分类号： B82Y10/00 ,  H01J9/025 ,  H01J2201/30469

摘要： Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure, the substantially vertically aligned carbon nanostructure coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure by forming an aperture in the gate and removing a portion of the dielectric.

摘要翻译： 描述了门控场发射器件及其制造的系统和方法。 一种方法包括生长基本上垂直排列的碳纳米结构，基本垂直排列的碳纳米结构耦合到基底; 用电介质覆盖基本垂直排列的碳纳米结构的至少一部分; 形成栅极，栅极耦合到电介质; 以及通过在所述栅极中形成孔并去除所述电介质的一部分来释放所述基本垂直取向的碳纳米结构。

公开(公告)号：US20120313170A1

公开(公告)日：2012-12-13

申请号：US13157812

申请日：2011-06-10

申请人： Josephine B. Chang ,  Michael A. Guillom ,  Wilfried Ernst-August Haensch

发明人： Josephine B. Chang ,  Michael A. Guillom ,  Wilfried Ernst-August Haensch

IPC分类号： H01L21/336 ,  H01L29/78 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/785 ,  H01L29/1037 ,  H01L29/66545 ,  H01L29/66795

摘要： FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer on an insulator. A plurality of fin hardmasks are patterned on the active layer. A dummy gate is placed over a central portion of the fin hardmasks. One or more doping agents are implanted into source and drain regions of the device. A dielectric filler layer is deposited around the dummy gate. The dummy gate is removed to form a trench in the dielectric filler layer. The fin hardmasks are used to etch a plurality of fins in the active layer within the trench. The doping agents are activated. A replacement gate is formed in the trench, wherein the step of activating the doping agents is performed before the step of forming the replacement gate.

摘要翻译： 提供FinFET器件及其制造方法。 一方面，一种用于制造FET器件的方法包括以下步骤。 提供了在绝缘体上具有有源层的晶片。 在活性层上形成多个散热片硬掩模。 虚拟门放置在散热片硬掩模的中心部分上。 将一种或多种掺杂剂注入到器件的源极和漏极区域中。 介电填料层沉积在虚拟栅极周围。 去除伪栅极以在介电填料层中形成沟槽。 散热片硬掩模用于蚀刻沟槽内的有源层中的多个散热片。 掺杂剂被激活。 在沟槽中形成替换栅极，其中激活掺杂剂的步骤在形成替换栅极的步骤之前进行。