Laser beam induced phenomena detection
    1.
    发明授权
    Laser beam induced phenomena detection 有权
    激光束诱发现象检测

    公开(公告)号:US06897664B1

    公开(公告)日:2005-05-24

    申请号:US10261390

    申请日:2002-09-30

    IPC分类号: G01R31/305 G01R31/311

    CPC分类号: G01R31/311

    摘要: Apparatus for and methods of inspection using laser beam induced alteration are provided. In one aspect, an apparatus is provided that includes a laser scanning microscope for directing a laser beam at a circuit structure and a source for biasing and thereby establishing a power condition in the circuit structure. A detection circuit is provided for detecting a change in the power condition in response to illumination of the circuit structure by the laser beam and generating a first output signal based on the detected change. A signal processor is provided for processing the first output signal and generating a second output signal based thereon. A control system is operable to scan the laser beam according to a pattern that has a plurality of pixel locations, whereby the laser beam may be moved to a given pixel location and allowed to dwell there for a selected time before being moved to another pixel location.

    摘要翻译: 提供了使用激光束诱发改变的装置和检查方法。 在一个方面,提供了一种装置,其包括用于将电路结构的激光束引导的激光扫描显微镜和用于偏置的源,从而在电路结构中建立功率状态。 提供一种检测电路,用于响应于激光束对电路结构的照明而检测功率状态的变化,并且基于检测到的变化产生第一输出信号。 提供信号处理器用于处理第一输出信号并基于此产生第二输出信号。 控制系统可操作以根据具有多个像素位置的图案来扫描激光束,由此激光束可以移动到给定的像素位置,并允许其在移动到另一像素位置之前在选定的时间停留 。

    Method and system for measuring laser induced phenomena changes in a semiconductor device
    2.
    发明申请
    Method and system for measuring laser induced phenomena changes in a semiconductor device 有权
    用于测量半导体器件中的激光诱发现象变化的方法和系统

    公开(公告)号:US20060284625A1

    公开(公告)日:2006-12-21

    申请号:US11158945

    申请日:2005-06-21

    IPC分类号: G01R27/08

    CPC分类号: G01R31/311 G01R17/105

    摘要: A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises interconnecting an electrical bridge circuit across the semiconductor device, the semiconductor device being connected as one of at least four circuit elements of the bridge circuit; inducing the changes in the semiconductor; and monitoring a balance condition of the bridge circuit.

    摘要翻译: 一种用于测量半导体器件中的电阻,电容和电感中的至少一个的激光感应现象变化的方法和系统。 该方法包括跨越半导体器件互连电桥电路,该半导体器件被连接为桥接电路的至少四个电路元件之一; 引起半导体的变化; 并监测桥接电路的平衡状态。