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    PILLAR-BASED INTERCONNECTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY
    1.
    发明申请
    PILLAR-BASED INTERCONNECTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
    用于磁阻随机存取存储器的基于柱状的互连

    公开(公告)号：US20120299136A1

    公开(公告)日：2012-11-29

    申请号：US13568670

    申请日：2012-08-07

    申请人： Solomon ASSEFA ,  Michael C. GAIDIS ,  Eric A. JOSEPH ,  Eugene J. O'SULLIVAN

    发明人： Solomon ASSEFA ,  Michael C. GAIDIS ,  Eric A. JOSEPH ,  Eugene J. O'SULLIVAN

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

    摘要： A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.

    摘要翻译： 半导体器件包括包括M2图案化区域的衬底。 在M2图案化区域上形成VA柱结构。 VA柱结构包括一个减少图案化的金属层。 VA柱结构是亚光刻接触。 在氧化物层和VA柱的金属层上形成MTJ堆叠。 MTJ叠层的尺寸和MTJ叠层的形状各向异性独立于亚光刻触点的尺寸和形状各向异性。

    SIDEWALL COATING FOR NON-UNIFORM SPIN MOMENTUM-TRANSFER MAGNETIC TUNNEL JUNCTION CURRENT FLOW
    2.
    发明申请
    SIDEWALL COATING FOR NON-UNIFORM SPIN MOMENTUM-TRANSFER MAGNETIC TUNNEL JUNCTION CURRENT FLOW 有权
    非均匀旋转磁场转移磁性隧道结电流流动的侧壁涂层

    公开(公告)号：US20110204459A1

    公开(公告)日：2011-08-25

    申请号：US13100123

    申请日：2011-05-03

    申请人： Michael C. GAIDIS

    发明人： Michael C. GAIDIS

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/08

    摘要： A magnetic tunnel junction device comprises a substrate including a patterned wiring layer. A magnetic tunnel junction (MTJ) stack is formed over the wiring layer. A low-conductivity layer is formed over the MTJ stack and a conductive hard mask is formed thereon. A spacer material is then deposited that includes a different electrical conductivity than the low conductivity layer. The spacer material is etched from horizontal surfaces so that the spacer material remains only on sidewalls of the hard mask and a stud. A further etch process leaves behind the sidewall-spacer material as a conductive link between a free magnetic layer and the conductive hard mask, around the low-conductivity layer. A difference in electrical conductivity between the stud and the spacer material enhances current flow along the edges of the free layer within the MTJ stack and through the spacer material formed on the sidewalls.

    摘要翻译： 磁性隧道结装置包括包括图案化的布线层的基板。 在布线层上形成磁隧道结（MTJ）堆叠。 在MTJ堆叠上形成低导电层，并在其上形成导电硬掩模。 然后沉积包括与低电导率层不同的导电性的间隔物材料。 间隔材料从水平表面被蚀刻，使得间隔物材料仅保留在硬掩模和螺柱的侧壁上。 另外的蚀刻工艺在侧壁间隔材料之后留下了作为导电连接在自由磁性层和导电硬掩模之间的低电导率层周围。 螺柱和间隔物材料之间的导电性差异增强了沿着MTJ堆叠内的自由层的边缘的流动以及通过形成在侧壁上的间隔物材料的电流。