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    Magnetic tunnel junction self-alignment in magnetic domain wall shift register memory devices
    2.
    发明授权
    Magnetic tunnel junction self-alignment in magnetic domain wall shift register memory devices 有权
    磁畴壁移位寄存器中的磁隧道结自对准

    公开(公告)号：US08741664B2

    公开(公告)日：2014-06-03

    申请号：US13555368

    申请日：2012-07-23

    申请人： Anthony J. Annunziata ,  Michael C. Gaidis

    发明人： Anthony J. Annunziata ,  Michael C. Gaidis

    IPC分类号： H01L21/00

    CPC分类号： G11C19/0808 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  H01F1/0072 ,  H01F10/3254 ,  H01F41/308

    摘要： A method of fabricating a self-aligning magnetic tunnel junction the method includes patterning a lithographic strip on a second magnetic material deposited on a first magnetic material that is disposed on a substrate, forming a top magnetic strip by etching an exposed portion of the second magnetic material, patterning a nanowire and a magnetic reference layer island over the substrate and forming the nanowire and the magnetic reference layer island by etching an exposed portion of the first magnetic layer and an exposed portion of the top magnetic strip, wherein an interface between the magnetic nanowire and the magnetic reference layer island is an magnetic tunnel junction aligned with a width of the nanowire.

    摘要翻译： 一种制造自对准磁性隧道结的方法，包括在沉积在第一磁性材料上的第二磁性材料上图案化平版印刷条，所述第一磁性材料设置在基板上，通过蚀刻第二磁性体的暴露部分形成顶部磁条 材料，在衬底上图案化纳米线和磁参考层岛，并通过蚀刻第一磁性层的暴露部分和顶部磁条的暴露部分形成纳米线和磁性参考层岛，其中磁性 纳米线和磁性参考层岛是与纳米线的宽度对准的磁性隧道结。

    MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES
    3.
    发明申请
    MAGNETIC TUNNEL JUNCTION SELF-ALIGNMENT IN MAGNETIC DOMAIN WALL SHIFT REGISTER MEMORY DEVICES 有权
    磁性隧道连接自动对位在磁性域移位寄存器存储器件

    公开(公告)号：US20140004625A1

    公开(公告)日：2014-01-02

    申请号：US13555368

    申请日：2012-07-23

    申请人： Anthony J. Annunziata ,  Michael C. Gaidis

    发明人： Anthony J. Annunziata ,  Michael C. Gaidis

    IPC分类号： H01L21/8246 ,  B82Y40/00

    CPC分类号： G11C19/0808 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  H01F1/0072 ,  H01F10/3254 ,  H01F41/308

    摘要： A method of fabricating a self-aligning magnetic tunnel junction the method includes patterning a lithographic strip on a second magnetic material deposited on a first magnetic material that is disposed on a substrate, forming a top magnetic strip by etching an exposed portion of the second magnetic material, patterning a nanowire and a magnetic reference layer island over the substrate and forming the nanowire and the magnetic reference layer island by etching an exposed portion of the first magnetic layer and an exposed portion of the top magnetic strip, wherein an interface between the magnetic nanowire and the magnetic reference layer island is an magnetic tunnel junction aligned with a width of the nanowire.

    摘要翻译： 一种制造自对准磁性隧道结的方法，包括在沉积在第一磁性材料上的第二磁性材料上图案化平版印刷条，所述第一磁性材料设置在基板上，通过蚀刻第二磁性体的暴露部分形成顶部磁条 材料，在衬底上图案化纳米线和磁参考层岛，并通过蚀刻第一磁性层的暴露部分和顶部磁条的暴露部分形成纳米线和磁性参考层岛，其中磁性 纳米线和磁性参考层岛是与纳米线的宽度对准的磁性隧道结。

    SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
    5.
    发明申请
    SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY 有权
    用于磁性随机存取存储器的转子转矩单元

    公开(公告)号：US20120326250A1

    公开(公告)日：2012-12-27

    申请号：US13168477

    申请日：2011-06-24

    申请人： MICHAEL C. GAIDIS ,  JANUSZ J. NOWAK ,  DANIEL C. WORLEDGE

    发明人： MICHAEL C. GAIDIS ,  JANUSZ J. NOWAK ,  DANIEL C. WORLEDGE

    IPC分类号： H01L29/82 ,  H01L21/8239

    CPC分类号： H01L43/12 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/307 ,  H01L43/08

    摘要： Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via.

    摘要翻译： 实施例针对STT MRAM设备。 STT MRAM器件的一个实施例包括参考层，隧道势垒层，自由层和一个或多个导电通孔。 参考层被配置为具有固定的磁矩。 此外，隧道势垒层被配置为使得电子能够通过隧道势垒层在参考层和自由层之间隧穿。 自由层设置在隧道势垒层之下，并被配置为具有用于存储数据的适应性磁矩。 导电通孔设置在自由层下方并连接到电极。 此外，导电通孔的宽度小于自由层的宽度，使得用于存储自由层中的数据的活动STT区域的宽度由导电通孔的宽度限定。

    Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor
    6.
    发明授权
    Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor 有权
    基于旋转力矩的存储器件，具有用非线性分流电阻调制的读和写电流路径

    公开(公告)号：US08270208B2

    公开(公告)日：2012-09-18

    申请号：US12701867

    申请日：2010-02-08

    申请人： Michael C. Gaidis ,  Janusz J. Nowak ,  Jonathan Z. Sun

    发明人： Michael C. Gaidis ,  Janusz J. Nowak ,  Jonathan Z. Sun

    IPC分类号： G11C11/00

    CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/24 ,  H01L43/08 ,  H01L45/04 ,  H01L45/145

    摘要： A spin-torque based memory device includes a write portion including a fixed ferromagnetic spin-polarizing layer, a spin-transport layer having a spin accumulation region formed above the fixed ferromagnetic spin-polarizing layer. The memory device further includes a read portion in electrical contact with the spin-transport layer. The read portion includes a free layer magnet, a read non-magnetic layer, and a reference layer. The memory device further includes a metal contact region formed overlying the read portion and a nonlinear resistor formed between an upper surface of the spin transport layer and the metal contact region and modulating write and read current paths depending on an applied voltage, thereby creating different current paths for write and read processes.

    摘要翻译： 基于自旋扭矩的存储器件包括：写入部分，其包括固定铁磁自旋极化层，具有形成在固定铁磁自旋偏振层上方的自旋存储区域的自旋传输层。 存储器件还包括与自旋传输层电接触的读取部分。 读取部分包括自由层磁体，读取非磁性层和参考层。 存储器件还包括覆盖读取部分的金属接触区域和形成在自旋传输层的上表面与金属接触区域之间的非线性电阻，并且根据所施加的电压调制写入和读取电流路径，从而产生不同的电流 写入和读取过程的路径。

    SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS MODULATED WITH A NON-LINEAR SHUNT RESISTOR
    7.
    发明申请
    SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS MODULATED WITH A NON-LINEAR SHUNT RESISTOR 有权
    具有读取和写入电流调制的非线性分流电阻的基于转子的基于记忆体的存储器件

    公开(公告)号：US20110194341A1

    公开(公告)日：2011-08-11

    申请号：US12701867

    申请日：2010-02-08

    申请人： Michael C. Gaidis ,  Janusz J. Nowak ,  Jonathan Z. Sun

    发明人： Michael C. Gaidis ,  Janusz J. Nowak ,  Jonathan Z. Sun

    IPC分类号： G11C11/14 ,  H01L21/00 ,  H01L29/12 ,  H01L29/82

    CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/24 ,  H01L43/08 ,  H01L45/04 ,  H01L45/145

    摘要： A spin-torque based memory device includes a write portion including a fixed ferromagnetic spin-polarizing layer, a spin-transport layer having a spin accumulation region formed above the fixed ferromagnetic spin-polarizing layer. The memory device further includes a read portion in electrical contact with the spin-transport layer. The read portion includes a free layer magnet, a read non-magnetic layer, and a reference layer. The memory device further includes a metal contact region formed overlying the read portion and a nonlinear resistor formed between an upper surface of the spin transport layer and the metal contact region and modulating write and read current paths depending on an applied voltage, thereby creating different current paths for write and read processes.

    摘要翻译： 基于自旋扭矩的存储器件包括：写入部分，其包括固定铁磁自旋极化层，具有形成在固定铁磁自旋偏振层上方的自旋存储区域的自旋传输层。 存储器件还包括与自旋传输层电接触的读取部分。 读取部分包括自由层磁体，读取非磁性层和参考层。 存储器件还包括覆盖读取部分的金属接触区域和形成在自旋传输层的上表面与金属接触区域之间的非线性电阻，并且根据所施加的电压调制写入和读取电流路径，从而产生不同的电流 写入和读取过程的路径。