公开(公告)号：US20070120110A1

公开(公告)日：2007-05-31

申请号：US11669021

申请日：2007-01-30

Applicant: Michael Estes ,  Blake Eliasson

Inventor： Michael Estes ,  Blake Eliasson

IPC: H01L29/06

CPC classification number: H01L29/7606 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L27/1446 ,  H01L29/7311 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L45/00

Abstract: A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

Abstract translation: 热电子晶体管包括发射极，基极，集电极和第一隧道结构，其布置并用作发射极和基极之间的电子传输。 第一隧道结构包括至少第一非晶绝缘层和不同的第二绝缘层，使得电子的传输包括通过隧道传输。 晶体管还包括设置在基极和集电极之间的第二隧道结构。 第二隧道结构用作通过弹道传输使得电子部分在集电极处收集的基极和集电极之间的至少一部分前述电子的传输。 还公开了一种用于在薄膜晶体管的界面处减少电子反射的相关方法。

公开(公告)号：US20060012000A1

公开(公告)日：2006-01-19

申请号：US11113587

申请日：2005-04-25

Applicant: Michael Estes ,  Blake Eliasson

Inventor： Michael Estes ,  Blake Eliasson

IPC: H01L29/82

CPC classification number: H01L29/7606 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L27/1446 ,  H01L29/7311 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L45/00

Abstract: A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

Abstract translation: 热电子晶体管包括发射极，基极，集电极和第一隧道结构，其布置并用作发射极和基极之间的电子传输。 第一隧道结构包括至少第一非晶绝缘层和不同的第二绝缘层，使得电子的传输包括通过隧道传输。 晶体管还包括设置在基极和集电极之间的第二隧道结构。 第二隧道结构用作通过弹道传输使得电子部分在集电极处收集的基极和集电极之间的至少一部分前述电子的传输。 还公开了一种用于在薄膜晶体管的界面处减少电子反射的相关方法。

公开(公告)号：US20060273301A1

公开(公告)日：2006-12-07

申请号：US11503585

申请日：2006-08-14

Applicant: Garret Moddel ,  Blake Eliasson

Inventor： Garret Moddel ,  Blake Eliasson

IPC: H01L29/08

CPC classification number: H01L27/1446 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/7311 ,  H01L29/7606 ,  H01L29/82 ,  H01L31/08 ,  H01L31/101 ,  H01L33/0004 ,  H01L33/0037 ,  H01L39/22 ,  H01L45/00

Abstract: A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.