Localized heating for defect isolation during die operation
    1.
    发明授权
    Localized heating for defect isolation during die operation 失效
    模具操作期间的缺陷隔离的局部加热

    公开(公告)号:US06873166B1

    公开(公告)日:2005-03-29

    申请号:US10234882

    申请日:2002-09-04

    摘要: According to an example embodiment, a system for testing a semiconductor die is provided. The semiconductor die has circuitry on one side and silicon on an opposite side, and the opposite side may be AR coated. The opposite side is thinned, the die is powered, and a portion of the circuitry is heated to cause a reaction (e.g., a circuit failure or recovery) in a target region. The circuitry is monitored, and the circuit that reacts to the heat is detected and analyzed.

    摘要翻译: 根据示例性实施例,提供了一种用于测试半导体管芯的系统。 半导体管芯在一侧具有电路,在相对侧具有硅,并且相对侧可以涂覆AR。 相对侧变薄,管芯被供电,并且电路的一部分被加热以引起目标区域中的反应(例如,电路故障或恢复)。 监测电路,并检测和分析与热量反应的电路。