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    DYNAMIC MULTI-PURPOSE COMPOSITION FOR THE REMOVAL OF PHOTORESISTS
    8.
    发明申请
    DYNAMIC MULTI-PURPOSE COMPOSITION FOR THE REMOVAL OF PHOTORESISTS 审中-公开
    用于去除光电的动态多用途组合物

    公开(公告)号：US20100104824A1

    公开(公告)日：2010-04-29

    申请号：US12446600

    申请日：2007-04-06

    申请人： Michael T. Phenis ,  Raymond Chan ,  Kimberly Dona Pollard

    发明人： Michael T. Phenis ,  Raymond Chan ,  Kimberly Dona Pollard

    IPC分类号： B32B5/00 ,  B08B3/08 ,  B08B5/00 ,  C11D1/835

    CPC分类号： G03F7/426 ,  C11D3/30 ,  C11D3/43 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5009 ,  C11D11/0047 ,  G03F7/425 ,  Y10T428/24802

    摘要： Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided. Advantageous solution methods are provided for the use of the novel stripper solutions to prepare an electronic interconnect structure by removing a plurality of resist layers to expose an underlying dielectric and related substrate without imparting damage to any of the underlying structure.

    摘要翻译： 提供了用于从基底去除一个，两个或更多个光致抗蚀剂层的改进的干燥剥离剂溶液。 汽提器溶液包括二甲亚砜，季铵氢氧化物和链烷醇胺，任选的二级溶剂和小于约3wt。 ％水和/或至少约1的干燥系数。另外提供了制备和使用改进的干燥剥离溶液的方法。 提供了有利的解决方案，用于使用新颖的剥离剂溶液来通过去除多个抗蚀剂层以暴露下面的电介质和相关的衬底来制备电子互连结构，而不会对任何下面的结构造成损害。

    Reduced metal etch rates using stripper solutions containing a copper salt
    9.
    发明授权
    Reduced metal etch rates using stripper solutions containing a copper salt 有权
    使用含有铜盐的汽提溶液降低金属蚀刻速率

    公开(公告)号：US07655608B2

    公开(公告)日：2010-02-02

    申请号：US11928754

    申请日：2007-10-30

    申请人： Kimberly Dona Pollard ,  Michael T. Phenis

    发明人： Kimberly Dona Pollard ,  Michael T. Phenis

    IPC分类号： C11D3/30 ,  C11D3/04 ,  C11D1/62

    CPC分类号： G03F7/425 ,  G03F7/423 ,  G03F7/426 ,  H01L21/31133

    摘要： Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

    摘要翻译： 具有减少的金属蚀刻速率，特别是铜蚀刻速率的用于制造电路和/或用于半导体集成电路的半导体器件上形成电极的抗蚀剂剥离剂提供有其使用方法。 优选的汽提剂含有低浓度的具有或不具有加入的胺的铜或钴盐以提高铜或钴盐的溶解度。 还提供了根据这些方法制备的集成电路器件和电子互连结构。

    Compositions for reducing metal etch rates using stripper solutions containing copper salts
    10.
    发明授权
    Compositions for reducing metal etch rates using stripper solutions containing copper salts 有权
    使用含铜盐的汽提溶液降低金属蚀刻速率的组合物

    公开(公告)号：US07851427B2

    公开(公告)日：2010-12-14

    申请号：US12697470

    申请日：2010-02-01

    申请人： Kimberly Dona Pollard ,  Michael T. Phenis

    发明人： Kimberly Dona Pollard ,  Michael T. Phenis

    IPC分类号： C11D3/30 ,  C11D3/04 ,  C11D1/62

    CPC分类号： G03F7/425 ,  G03F7/423 ,  G03F7/426 ,  H01L21/31133

    摘要： Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

    摘要翻译： 具有减少的金属蚀刻速率，特别是铜蚀刻速率的用于制造电路和/或用于半导体集成电路的半导体器件上形成电极的抗蚀剂剥离剂提供有其使用方法。 优选的汽提剂含有低浓度的具有或不具有加入的胺的铜盐以改善盐的溶解度。 还提供了根据这些方法制备的集成电路器件和电子互连结构。