公开(公告)号：US06265286B1

公开(公告)日：2001-07-24

申请号：US09190747

申请日：1998-11-12

申请人： Michelle A. Boyer ,  Sarma Gunturi ,  Catherine M. Huber

发明人： Michelle A. Boyer ,  Sarma Gunturi ,  Catherine M. Huber

IPC分类号： H01L2176

CPC分类号： H01L21/76221

摘要： A method of fabricating a semiconductor device which includes providing a silicon substrate having a patterned mask thereover to expose a portion of the surface of the substrate. The exposed surface portion is oxidized to form a sacrificial silicon oxide region to a predetermined depth in the substrate at the exposed portions of the substrate. The sacrificial silicon oxide is then removed by a HF etch and a second region of silicon oxide is formed in the substrate in the region from which the sacrificial silicon oxide was removed. The step of removing the silicon oxide also includes removing a portion of the pad oxide. The sacrificial silicon oxide has a thickness less than the second region of silicon oxide which is from about 10 percent to about 30 percent of the thickness of the second region of silicon oxide. The oxidation steps are thermal oxidation steps in an oxygen-containing ambient.

摘要翻译： 一种制造半导体器件的方法，其包括提供其上具有图案化掩模的硅衬底以暴露衬底的表面的一部分。 暴露的表面部分被氧化以在衬底的暴露部分处在衬底中形成预定深度的牺牲氧化硅区域。 然后通过HF蚀刻去除牺牲氧化硅，并且在去除牺牲氧化硅的区域中的衬底中形成第二氧化硅区域。 去除硅氧化物的步骤还包括去除一部分衬垫氧化物。 牺牲氧化硅的厚度小于氧化硅的第二区域，其厚度为氧化硅第二区域厚度的约10％至约30％。 氧化步骤是含氧环境中的热氧化步骤。