PIXEL STRUCTURE OF SOLID-STATE IMAGE SENSOR
    1.
    发明申请
    PIXEL STRUCTURE OF SOLID-STATE IMAGE SENSOR 有权
    固态图像传感器的像素结构

    公开(公告)号:US20090278174A1

    公开(公告)日:2009-11-12

    申请号:US12463622

    申请日:2009-05-11

    IPC分类号: H01L27/148

    CPC分类号: H01L27/14609 H01L27/14812

    摘要: A pixel structure of a solid-state image sensor in which residual electrons in a photodiode is reduced and which has a first-stage gate that is arranged adjacent to the photodiode and controls read-out of electrons generated in the photodiode, a second-stage gate that is adjacent to the first-stage gate on the rear stage of the gate at a predetermined gap and controls movement of electrons read out by the readout control of the first-stage gate to the plurality of the charge-storage sections, and a plurality of third-stage gates that are adjacent to the second-stage gate on the rear stage of the gate at a predetermined gap, severally arranged corresponding to the plurality of the charge-storage sections, and perform control of distributing the electrons moved by the movement control of the second-stage gate severally to the plurality of the charge-storage sections, and gradient on which electrons are moved in the first-stage gate direction is formed on the potential of the photodiode.

    摘要翻译: 固态图像传感器的像素结构,其中光电二极管中的残余电子减少,并且具有与光电二极管相邻布置的第一级栅极并控制在光电二极管中产生的电子的读出,第二级 栅极,以预定间隙与栅极的后级上的第一级栅极相邻,并且控制通过第一级栅极的读出控制读出的电子到多个电荷存储部分的移动,以及 多个第三级栅极,与栅极的后级上的第二级栅极相邻的预定间隙相邻设置,分别对应于多个电荷存储部分,并且执行将由 在二极管的电位上形成第二级栅极与多个电荷存储部分的移动控制,以及电子在第一级栅极方向上移动的梯度。

    Pixel structure of a solid-state image sensor employing a charge sorting method
    2.
    发明授权
    Pixel structure of a solid-state image sensor employing a charge sorting method 有权
    使用电荷分选方法的固态图像传感器的像素结构

    公开(公告)号:US08710561B2

    公开(公告)日:2014-04-29

    申请号:US12463622

    申请日:2009-05-11

    IPC分类号: H01L31/062

    CPC分类号: H01L27/14609 H01L27/14812

    摘要: A pixel structure of a solid-state image sensor in which residual electrons in a photodiode is reduced and which has a first-stage gate that is arranged adjacent to the photodiode and controls read-out of electrons generated in the photodiode, a second-stage gate that is adjacent to the first-stage gate on the rear stage of the gate at a predetermined gap and controls movement of electrons read out by the readout control of the first-stage gate to the plurality of the charge-storage sections, and a plurality of third-stage gates that are adjacent to the second-stage gate on the rear stage of the gate at a predetermined gap, severally arranged corresponding to the plurality of the charge-storage sections, and perform control of distributing the electrons moved by the movement control of the second-stage gate severally to the plurality of the charge-storage sections, and gradient on which electrons are moved in the first-stage gate direction is formed on the potential of the photodiode.

    摘要翻译: 固态图像传感器的像素结构,其中光电二极管中的残余电子减少,并且具有与光电二极管相邻布置的第一级栅极并控制在光电二极管中产生的电子的读出,第二级 栅极,以预定间隙与栅极的后级上的第一级栅极相邻,并且控制通过第一级栅极的读出控制读出的电子到多个电荷存储部分的移动,以及 多个第三级栅极,与栅极的后级上的第二级栅极相邻的预定间隙相邻设置,分别对应于多个电荷存储部分,并且执行将由 在二极管的电位上形成第二级栅极与多个电荷存储部分的移动控制,以及电子在第一级栅极方向上移动的梯度。

    Pixel structure of solid-state image sensor
    3.
    发明申请
    Pixel structure of solid-state image sensor 有权
    固态图像传感器的像素结构

    公开(公告)号:US20090057673A1

    公开(公告)日:2009-03-05

    申请号:US12216814

    申请日:2008-07-10

    IPC分类号: H01L31/00

    摘要: To eliminate uneven distribution of electrons caused by variation in threshold voltages of gates for distributing electrons and to have sensitivity in a long wavelength in a pixel structure of a solid-state image sensor of a charge sorting method, the structure has: a photodiode that generates electrons by photoelectric conversion; a plurality of charge-storage sections that store electrons generated in the photodiode; and a gate structure that is arranged between the photodiode and the charge-storage sections and controls transfer of electrons generated in the photodiode to the plurality of charge-storage sections, in which the gate structure is made up of plural stages of gates, and the plural stages of gates at least have: a front stage gate that is arranged adjacent to the photodiode and controls readout of electrons generated in the photodiode; and a rear stage gate that is arranged adjacent to the plurality of charge-storage sections on the rear stage of the front stage gate and performs control of distributing electrons read out by readout control of the front stage gate to the plurality of charge-storage sections.

    摘要翻译: 为了消除由电荷分配用栅极的阈值电压的变化引起的电子不均匀分布,并且在电荷分选方法的固态图像传感器的像素结构中具有长波长的灵敏度,该结构具有:产生 电子通过光电转换; 存储在光电二极管中产生的电子的多个电荷存储部; 以及栅极结构,其布置在光电二极管和电荷存储部之间,并且控制在光电二极管中产生的电子传输到多个电荷存储部分,其中栅极结构由多级栅极构成,并且 多级栅极至少具有:与栅极相邻设置的前级栅极,并且控制在光电二极管中产生的电子的读出; 以及后级栅极,其与前级栅极的后级上的多个电荷存储部分相邻配置,并且通过前级栅极的读出控制读出的电子分配到多个电荷存储部分 。

    Solid-state image sensor
    4.
    发明授权
    Solid-state image sensor 有权
    固态图像传感器

    公开(公告)号:US07683954B2

    公开(公告)日:2010-03-23

    申请号:US11905133

    申请日:2007-09-27

    IPC分类号: H01L27/00 H04N3/14

    摘要: A solid-state image sensor of a charge sorting method used in a time-of-flight measurement method, in which noise derived from background light, which is caused by the reflection light from the subject derived from background light is eliminated, reflection light from the subject derived from a predetermined light source, which is previously set in the solid-state image sensor, is effectively extracted as a signal component to achieve high sensitivity and low noise, which is a solid-state image sensor that is equipped with a plurality of charge-storage sections, discriminates photoelectrons generated by incoming light on the incoming timing and sort to the above-described plurality of charge-storage sections, and measures the timing of the incoming light, in which the sensor has: a plurality of capacitors that capable of conducting to the plurality of charge-storage sections; and a control section that controls a conducted state between the above-described plurality of charge-storage sections and the above-described plurality of capacitors, in which by selectively conducting the above-described plurality of charge-storage sections and the above-described plurality of capacitors by the control of the above-described control section, the difference component of charge stored in the above-described plurality of charge-storage sections is extracted.

    摘要翻译: 一种在飞行时间测量方法中使用的电荷分选方法的固态图像传感器,其中消除了由源自背景光的来自被摄体的反射光引起的背景光的噪声,来自 将预先设置在固态图像传感器中的预定光源导出的被摄体作为信号分量被有效地提取,以实现高灵敏度和低噪声,其是配备有多个的固态图像传感器 的电荷存储部分,鉴别入射时间产生的光电子并对上述多个电荷存储部分进行分类,并测量传入的光的定时,其中传感器具有:多个电容器, 能够对多个电荷存储部进行导通; 以及控制部,其控制上述多个电荷存储部与上述多个电容器之间的导通状态,其中通过选择性地导通上述多个电荷存储部和上述多个电荷存储部 通过上述控制部分的控制,提取存储在上述多个电荷存储部分中的电荷的差分分量。

    Solid-state image sensor
    5.
    发明申请
    Solid-state image sensor 有权
    固态图像传感器

    公开(公告)号:US20080079833A1

    公开(公告)日:2008-04-03

    申请号:US11905133

    申请日:2007-09-27

    IPC分类号: H04N5/335

    摘要: A solid-state image sensor of a charge sorting method used in a time-of-flight measurement method, in which noise derived from background light, which is caused by the reflection light from the subject derived from background light is eliminated, reflection light from the subject derived from a predetermined light source, which is previously set in the solid-state image sensor, is effectively extracted as a signal component to achieve high sensitivity and low noise, which is a solid-state image sensor that is equipped with a plurality of charge-storage sections, discriminates photoelectrons generated by incoming light on the incoming timing and sort to the above-described plurality of charge-storage sections, and measures the timing of the incoming light, in which the sensor has: a plurality of capacitors that capable of conducting to the plurality of charge-storage sections; and a control section that controls a conducted state between the above-described plurality of charge-storage sections and the above-described plurality of capacitors, in which by selectively conducting the above-described plurality of charge-storage sections and the above-described plurality of capacitors by the control of the above-described control section, the difference component of charge stored in the above-described plurality of charge-storage sections is extracted.

    摘要翻译: 一种在飞行时间测量方法中使用的电荷分选方法的固态图像传感器,其中消除了由源自背景光的来自被摄体的反射光引起的背景光的噪声,来自 将预先设置在固态图像传感器中的预定光源导出的被摄体作为信号分量被有效地提取,以实现高灵敏度和低噪声,其是配备有多个的固态图像传感器 的电荷存储部分,鉴别入射时间产生的光电子并对上述多个电荷存储部分进行分类,并测量传入的光的定时,其中传感器具有:多个电容器, 能够对多个电荷存储部进行导通; 以及控制部,其控制上述多个电荷存储部与上述多个电容器之间的导通状态,其中通过选择性地导通上述多个电荷存储部和上述多个电荷存储部 通过上述控制部分的控制,提取存储在上述多个电荷存储部分中的电荷的差分分量。

    Pixel structure of solid-state image sensor
    6.
    发明授权
    Pixel structure of solid-state image sensor 有权
    固态图像传感器的像素结构

    公开(公告)号:US07888716B2

    公开(公告)日:2011-02-15

    申请号:US12216814

    申请日:2008-07-10

    IPC分类号: H01L31/062

    摘要: To eliminate uneven distribution of electrons caused by variation in threshold voltages of gates for distributing electrons and to have sensitivity in a long wavelength in a pixel structure of a solid-state image sensor of a charge sorting method, the structure has: a photodiode that generates electrons by photoelectric conversion; a plurality of charge-storage sections that store electrons generated in the photodiode; and a gate structure that is arranged between the photodiode and the charge-storage sections and controls transfer of electrons generated in the photodiode to the plurality of charge-storage sections, in which the gate structure is made up of plural stages of gates, and the plural stages of gates at least have: a front stage gate that is arranged adjacent to the photodiode and controls readout of electrons generated in the photodiode; and a rear stage gate that is arranged adjacent to the plurality of charge-storage sections on the rear stage of the front stage gate and performs control of distributing electrons read out by readout control of the front stage gate to the plurality of charge-storage sections.

    摘要翻译: 为了消除由电荷分配用栅极的阈值电压的变化引起的电子不均匀分布,并且在电荷分选方法的固态图像传感器的像素结构中具有长波长的灵敏度,该结构具有:产生 电子通过光电转换; 存储在光电二极管中产生的电子的多个电荷存储部; 以及栅极结构,其布置在光电二极管和电荷存储部之间,并且控制在光电二极管中产生的电子传输到多个电荷存储部分,其中栅极结构由多级栅极构成,并且 多级栅极至少具有:与栅极相邻设置的前级栅极,并且控制在光电二极管中产生的电子的读出; 以及后级栅极,其与前级栅极的后级上的多个电荷存储部分相邻配置,并且通过前级栅极的读出控制读出的电子分配到多个电荷存储部分 。