公开(公告)号：US20240355809A1

公开(公告)日：2024-10-24

申请号：US18520616

申请日：2023-11-28

Applicant: Microchip Technology Incorporated

Inventor： Dong Wang ,  Jim Nolan ,  HongZhong Xu

IPC: H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/0292

Abstract: A circuit for electrostatic discharge (ESD) protection may protect sensitive circuits in the presence of both positive and negative ESD events. A protection transistor may be coupled to a pad, and a protection clamp may be coupled to the protection transistor. The protection transistor may be in an isolation n-well, and a current limiting resistor may be coupled from the pad to the isolation n-well. In operation, the current limiting resistor may limit the current during negative ESD events.