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公开(公告)号：US20250158612A1
公开(公告)日：2025-05-15
申请号：US18949712
申请日：2024-11-15
Applicant: Microchip Technology Incorporated
Inventor： David Gammie , Lunal Khuon
IPC: H03K17/687
Abstract: An apparatus may include a Silicon Carbide (SiC) Field-Effect Transistor (PET) and a sense buffer circuit. The sense buffer circuit may sense a gate-to-source voltage (VGS) of the SiC PET. The sense buffer circuit may include a buffer circuit at an input of the sense buffer circuit. The buffer circuit may have a smaller input voltage range than the sense buffer circuit.
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