公开(公告)号：US20230389314A1

公开(公告)日：2023-11-30

申请号：US17879140

申请日：2022-08-02

Applicant: Micron Technology, Inc

Inventor： Adam Barton ,  David H. Wells ,  Pengyuan Zheng ,  Amritesh Rai

IPC: H01L27/11582 ,  G11C16/04 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory-cell strings extend through the insulative and conductive tiers. Conductive vias are formed above and individually directly electrically coupled to individual of the channel-material strings. Digitlines are formed above and are individually directly electrically coupled to a plurality of individual of the conductive vias there-below. The forming of the digitlines comprises forming lower elemental-form tungsten directly against tops of the individual conductive vias. The lower elemental-form tungsten is exposed to oxygen-containing gas or plasma to form WOx, where “x” is greater than 0 and no more than 3.0. The WOx has a maximum thickness greater than 0 and no more than 30 Angstroms in a finished construction. Upper elemental-form tungsten is physical vapor deposited directly against the WOx. Other embodiments, including structure, are disclosed.