公开(公告)号：US20150340320A1

公开(公告)日：2015-11-26

申请号：US14817451

申请日：2015-08-04

Applicant: Micron Technology, Inc.

Inventor： Sanjeev Sapra ,  Cheng-Shun Chen ,  Hung-Ming Tsai ,  Sheng-Wei Yang

IPC: H01L23/528 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L23/5283 ,  B82Y30/00 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/31111 ,  H01L29/04 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of creating a trench having a portion of a bulb-shaped cross-section in silicon is disclosed. The method comprises forming at least one trench in silicon and forming a liner in the at least one trench. The liner is removed from a bottom surface of the at least one trench to expose the underlying silicon. A portion of the underlying exposed silicon is removed to form a cavity in the silicon. At least one removal cycle is conducted to remove exposed silicon in the cavity to form a bulb-shaped cross-sectional profile, with each removal cycle comprising subjecting the silicon in the cavity to ozonated water to oxidize the silicon and subjecting the oxidized silicon to a hydrogen fluoride solution to remove the oxidized silicon. A semiconductor device structure comprising the at least one trench comprising a cavity with a bulb-shaped cross-sectional profile is also disclosed.

Abstract translation: 公开了一种在硅中产生一个具有一个灯泡形横截面的沟槽的方法。 该方法包括在硅中形成至少一个沟槽并在至少一个沟槽中形成衬垫。 将衬垫从至少一个沟槽的底表面移除以暴露下面的硅。 去除底层暴露的硅的一部分以在硅中形成空腔。 进行至少一个去除周期以去除空腔中的暴露的硅以形成球形横截面轮廓，每个去除周期包括使空腔中的硅经受臭氧化水以氧化硅并将氧化的硅经受 氟化氢溶液去除氧化硅。 还公开了一种半导体器件结构，其包括包括具有灯泡形横截面轮廓的空腔的至少一个沟槽。