公开(公告)号：US09343149B2

公开(公告)日：2016-05-17

申请号：US14328536

申请日：2014-07-10

Applicant: Micron Technology, Inc.

Inventor： Agostino Pirovano ,  Fabio Pellizzer ,  Anna Maria Conti ,  Davide Fugazza ,  Johannes A. Kalb

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/0092

Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.

Abstract translation: 本文公开的各种实施例包括用于将存储器阵列的相变存储器（PCM）单元放置在其中在应用随后的SET编程信号之前增强PCM单元的成核概率的温度状态的方法和装置。 在一个实施例中，该方法包括将成核信号施加到PCM单元以在存储器阵列内形成成核位置，其中成核信号具有非零上升沿。 随后施加编程信号以在所述多个PCM单元的选定的单元内实现期望的结晶度。 还描述了附加的方法和装置。

公开(公告)号：US20160012888A1

公开(公告)日：2016-01-14

申请号：US14328536

申请日：2014-07-10

Applicant: Micron Technology, Inc.

Inventor： Agostino Pirovano ,  Fabio Pellizzer ,  Anna Maria Conti ,  Davide Fugazza ,  Johannes A. Kalb

IPC: G11C13/00

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/0092

Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.

公开(公告)号：US09990989B2

公开(公告)日：2018-06-05

申请号：US15154410

申请日：2016-05-13

Applicant: Micron Technology, Inc.

Inventor： Agostino Pirovano ,  Fabio Pellizzer ,  Anna Maria Conti ,  Davide Fugazza ,  Johannes A. Kalb

IPC: G11C11/00 ,  G11C13/00 ,  G11C7/04

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/0092

Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.

公开(公告)号：US20190295642A1

公开(公告)日：2019-09-26

申请号：US16372010

申请日：2019-04-01

Applicant: Micron Technology, Inc.

Inventor： Agostino Pirovano ,  Fabio Pellizzer ,  Anna Maria Conti ,  Davide Fugazza ,  Johannes A. Kalb

IPC: G11C13/00

Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.

公开(公告)号：US10276235B2

公开(公告)日：2019-04-30

申请号：US15980480

申请日：2018-05-15

Applicant: Micron Technology, Inc.

Inventor： Agostino Pirovano ,  Fabio Pellizzer ,  Anna Maria Conti ,  Davide Fugazza ,  Johannes A. Kalb

IPC: G11C13/00 ,  G11C7/04

Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.

公开(公告)号：US20180268899A1

公开(公告)日：2018-09-20

申请号：US15980480

申请日：2018-05-15

Applicant: Micron Technology, Inc.

Inventor： Agostino Pirovano ,  Fabio Pellizzer ,  Anna Maria Conti ,  Davide Fugazza ,  Johannes A. Kalb

IPC: G11C13/00 ,  G11C7/04

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/0092

Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.

公开(公告)号：US20160254050A1

公开(公告)日：2016-09-01

申请号：US15154410

申请日：2016-05-13

Applicant: Micron Technology, Inc.

Inventor： Agostino Pirovano ,  Fabio Pellizzer ,  Anna Maria Conti ,  Davide Fugazza ,  Johannes A. Kalb

IPC: G11C13/00

CPC classification number: G11C13/0004 ,  G11C7/04 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/0092

Abstract: Various embodiments disclosed herein comprise methods and apparatuses for placing phase-change memory (PCM) cells of a memory array into a temperature regime where nucleation probability of the PCM cells is enhanced prior to applying a subsequent SET programming signal. In one embodiment, the method includes applying a nucleation signal to the PCM cells to form nucleation sites within the memory array where the nucleation signal has a non-zero rising-edge. A programming signal is subsequently applied to achieve a desired level of crystallinity within selected ones of the plurality of PCM cells. Additional methods and apparatuses are also described.

Abstract translation: 本文公开的各种实施例包括用于将存储器阵列的相变存储器（PCM）单元放置在其中在应用随后的SET编程信号之前增强PCM单元的成核概率的温度状态的方法和装置。 在一个实施例中，该方法包括将成核信号施加到PCM单元以在存储器阵列内形成成核位置，其中成核信号具有非零上升沿。 随后施加编程信号以在所述多个PCM单元的选定的单元内实现期望的结晶度。 还描述了附加的方法和装置。