公开(公告)号：US20210201981A1

公开(公告)日：2021-07-01

申请号：US17022030

申请日：2020-09-15

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Debra M. Bell ,  Arunmozhi R. Subramaniam ,  Roya Baghi ,  Deepika Thumsi Umesh ,  Sue-Fern Ng

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4074 ,  G11C11/4076

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

公开(公告)号：US11735247B2

公开(公告)日：2023-08-22

申请号：US17672537

申请日：2022-02-15

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Debra M. Bell ,  Arunmozhi R. Subramaniam ,  Roya Baghi ,  Deepika Thumsi Umesh ,  Sue-Fern Ng

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4076 ,  G11C11/4074

CPC classification number: G11C11/4085 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/4099

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

公开(公告)号：US11270757B2

公开(公告)日：2022-03-08

申请号：US17022030

申请日：2020-09-15

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Debra M. Bell ,  Arunmozhi R. Subramaniam ,  Roya Baghi ,  Deepika Thumsi Umesh ,  Sue-Fern Ng

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4076 ,  G11C11/4074

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

公开(公告)号：US20220172768A1

公开(公告)日：2022-06-02

申请号：US17672537

申请日：2022-02-15

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Debra M. Bell ,  Arunmozhi R. Subramaniam ,  Roya Baghi ,  Deepika Thumsi Umesh ,  Sue-Fern Ng

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4076 ,  G11C11/4074

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.