公开(公告)号：US20160172031A1

公开(公告)日：2016-06-16

申请号：US15050248

申请日：2016-02-22

Applicant: Micron Technology, Inc.

Inventor： Emiliano Faraoni ,  Scott E. Sills ,  Alessandro Calderoni ,  Adam Johnson

IPC: G11C13/00

CPC classification number: G11C13/0064 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0066 ,  G11C2013/0071 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

Abstract: Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

公开(公告)号：US20190074060A1

公开(公告)日：2019-03-07

申请号：US16176417

申请日：2018-10-31

Applicant: Micron Technology, Inc.

Inventor： Emiliano Faraoni ,  Scott E. Sills ,  Alessandro Calderoni ,  Adam Johnson

IPC: G11C13/00

Abstract: Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

公开(公告)号：US11024378B2

公开(公告)日：2021-06-01

申请号：US16176417

申请日：2018-10-31

Applicant: Micron Technology, Inc.

Inventor： Emiliano Faraoni ,  Scott E. Sills ,  Alessandro Calderoni ,  Adam Johnson

IPC: G11C13/00

Abstract: Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

公开(公告)号：US09269432B2

公开(公告)日：2016-02-23

申请号：US14151729

申请日：2014-01-09

Applicant: Micron Technology, Inc.

Inventor： Emiliano Faraoni ,  Scott E. Sills ,  Alessandro Calderoni ,  Adam Johnson

IPC: G11C13/00

CPC classification number: G11C13/0064 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0066 ,  G11C2013/0071 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

Abstract: Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

Abstract translation: 描述了存储器系统和存储器编程方法。 根据一种布置，存储器系统包括存储器阵列，该存储器阵列包括单独配置成具有多个不同存储器状态的多个存储器单元，其被配置为将信号施加到存储器单元以将存储器单元编程到不同的存储器状态， 以及控制器，被配置为控制所述访问电路以将所述信号中的第一信号施加到所述存储器单元之一，以将所述一个存储器单元从第一存储器状态编程到与所述第一存储器状态不同的第二存储器状态，以确定所述 作为施加第一信号的结果，一个存储器单元不能进入第二存储器状态，并且控制访问电路将第二信号施加到一个存储器单元，以将一个存储器单元从第一存储器状态编程为 作为确定结果的第二存储器状态，其中第一和第二信号具有不同的电特性。

公开(公告)号：US10147486B2

公开(公告)日：2018-12-04

申请号：US15050248

申请日：2016-02-22

Applicant: Micron Technology, Inc.

Inventor： Emiliano Faraoni ,  Scott E. Sills ,  Alessandro Calderoni ,  Adam Johnson

IPC: G11C13/00

Abstract: Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

公开(公告)号：US20150194212A1

公开(公告)日：2015-07-09

申请号：US14151729

申请日：2014-01-09

Applicant: Micron Technology, Inc.

Inventor： Emiliano Faraoni ,  Scott E. Sills ,  Alessandro Calderoni ,  Adam Johnson

IPC: G11C13/00

CPC classification number: G11C13/0064 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0066 ,  G11C2013/0071 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

Abstract: Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

Abstract translation: 描述了存储器系统和存储器编程方法。 根据一种布置，存储器系统包括存储器阵列，该存储器阵列包括单独配置成具有多个不同存储器状态的多个存储器单元，其被配置为将信号施加到存储器单元以将存储器单元编程到不同的存储器状态， 以及控制器，被配置为控制所述访问电路以将所述信号中的第一信号施加到所述存储器单元之一，以将所述一个存储器单元从第一存储器状态编程到与所述第一存储器状态不同的第二存储器状态，以确定所述 作为施加第一信号的结果，一个存储器单元不能进入第二存储器状态，并且控制访问电路将第二信号施加到一个存储器单元，以将一个存储器单元从第一存储器状态编程为 作为确定结果的第二存储器状态，其中第一和第二信号具有不同的电特性。