公开(公告)号：US20210090656A1

公开(公告)日：2021-03-25

申请号：US17111721

申请日：2020-12-04

Applicant: Micron Technology, Inc.

Inventor： Umberto Minucci ,  Tommaso Vali ,  Fernanda Irrera ,  Luca De Santis

IPC: G11C16/04 ,  G06N3/063 ,  G06F3/06

Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.

公开(公告)号：US20200211648A1

公开(公告)日：2020-07-02

申请号：US16235066

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Umberto Minucci ,  Tommaso Vali ,  Fernanda Irrera ,  Luca De Santis

IPC: G11C16/04 ,  G06N3/063 ,  G06F3/06

Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.

公开(公告)号：US10861551B2

公开(公告)日：2020-12-08

申请号：US16235066

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Umberto Minucci ,  Tommaso Vali ,  Fernanda Irrera ,  Luca De Santis

IPC: G11C16/04 ,  G06N3/063 ,  G06F3/06

Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.

公开(公告)号：US11437103B2

公开(公告)日：2022-09-06

申请号：US17111721

申请日：2020-12-04

Applicant: Micron Technology, Inc.

Inventor： Umberto Minucci ,  Tommaso Vali ,  Fernanda Irrera ,  Luca De Santis

IPC: G06F3/06 ,  G11C16/04 ,  G06N3/063

Abstract: A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.