公开(公告)号：US20140151857A1

公开(公告)日：2014-06-05

申请号：US14176961

申请日：2014-02-10

Applicant: Micron Technology, Inc.

Inventor： Garo J. Derderian ,  Cem Basceri ,  Donald L. Westmoreland

IPC: H01L29/06 ,  H01L21/324 ,  B01J20/34

CPC classification number: H01L29/06 ,  B01J20/3483 ,  B01J38/02 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4412 ,  H01L21/324 ,  H01L23/58 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract translation: 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。

公开(公告)号：US20130231240A1

公开(公告)日：2013-09-05

申请号：US13858644

申请日：2013-04-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Garo J. Derderian ,  Cem Basceri ,  Donald L. Westmoreland

IPC: H01L23/58 ,  B01J38/02

CPC classification number: H01L29/06 ,  B01J20/3483 ,  B01J38/02 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4412 ,  H01L21/324 ,  H01L23/58 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract translation: 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。

公开(公告)号：US08691015B2

公开(公告)日：2014-04-08

申请号：US13858644

申请日：2013-04-08

Applicant: Micron Technology, Inc.

Inventor： Garo J. Derderian ,  Cem Basceri ,  Donald L. Westmoreland

IPC: C23C16/08 ,  C23C16/06 ,  C23C16/22 ,  C23C16/14 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44

CPC classification number: H01L29/06 ,  B01J20/3483 ,  B01J38/02 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4412 ,  H01L21/324 ,  H01L23/58 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract translation: 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。