公开(公告)号：US10833087B2

公开(公告)日：2020-11-10

申请号：US16107324

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Fredrick D. Fishburn ,  Haitao Liu ,  Soichi Sugiura ,  Oscar O. Enomoto ,  Mark A. Zaleski ,  Keisuke Hirofuji ,  Makoto Morino ,  Ichiro Abe ,  Yoshiyuki Nanjo ,  Atsuko Otsuka

IPC: H01L27/00 ,  H01L27/108 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed.

公开(公告)号：US20200066726A1

公开(公告)日：2020-02-27

申请号：US16107324

申请日：2018-08-21

Applicant: Micron Technology, Inc.

Inventor： Fredrick D. Fishburn ,  Haitao Liu ,  Soichi Sugiura ,  Oscar O. Enomoto ,  Mark A. Zaleski ,  Keisuke Hirofuji ,  Makoto Morino ,  Ichiro Abe ,  Yoshiyuki Nanjo ,  Atsuko Otsuka

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device comprises a memory storage component and a transistor in operable communication with the memory storage element. The transistor comprises a source region, a drain region, a gate electrode between the source region and the drain region, a charge trapping material surrounding at least an upper portion of the gate electrode, and an oxide material on sides of the charge trapping material. Related systems and methods are also disclosed.