公开(公告)号：US20240332229A1

公开(公告)日：2024-10-03

申请号：US18619071

申请日：2024-03-27

Applicant: Micron Technology, Inc.

Inventor： Bharat Bhushan ,  Tzu Ching Hung ,  Kyle K. Kirby ,  Julia VanWinkle ,  Kyle B. Campbell ,  Bret K. Street

IPC: H01L23/00 ,  H01L21/66

CPC classification number: H01L24/06 ,  H01L22/32 ,  H01L24/03 ,  H01L24/08 ,  H01L2224/06517 ,  H01L2224/08146

Abstract: A semiconductor device is provided. The semiconductor device can have a front side at which circuitry is disposed. The circuitry can include a pad and a plurality of lines. A first layer of dielectric material can be disposed at the front side at least partially over the pad and the plurality of lines. A second layer of dielectric material can be disposed at the front side at least partially over the first layer of dielectric material. A dual damascene pad can extend through the first layer of dielectric material and the second layer of dielectric material to the pad. A dummy pad can be disposed in the second layer of dielectric material above the plurality of lines and spaced from the dual damascene pad. In doing so, a reliable semiconductor device can be implemented.