公开(公告)号：US20030094892A1

公开(公告)日：2003-05-22

申请号：US10327485

申请日：2002-12-20

Applicant: Micron Technology, Inc.

Inventor： Behnam Moradi ,  Kanwal K. Raina ,  Michael J. Westphal

IPC: H01J001/304 ,  H01J019/24

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: Improved field emission display includes a buffer layer of copper, aluminum, silicon nitride or doped or undoped amorphous, poly, or microcrystalline silicon located between a chromium gate electrode and associated dielectric layer in a cathode assembly. The buffer layer substantially reduces or eliminates the occurrence of an adverse chemical reaction between the chromium gate electrode and dielectric layer.

Abstract translation: 改进的场致发射显示器包括位于阴极组件中的铬栅电极和相关介电层之间的铜，铝，氮化硅或掺杂或未掺杂的非晶，多晶或微晶硅的缓冲层。 缓冲层基本上减少或消除了铬栅电极和电介质层之间不利的化学反应的发生。