公开(公告)号：US20250103416A1

公开(公告)日：2025-03-27

申请号：US18909706

申请日：2024-10-08

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Kristen M. Hopper ,  Erika Prosser ,  Aaron P. Boehm

IPC: G06F11/07 ,  G06F1/20 ,  G06F1/30 ,  G06F3/06 ,  G06F11/30

Abstract: Methods, systems, and devices for persistent health monitoring for volatile memory devices are described. A memory device may determine that an operating condition associated with an array of memory cells on the device, such as a temperature, current, voltage, or other metric of health status is outside of a range associated with a risk of device degradation. The memory device may monitor a duration over which the operating condition is outside of the range, and may determine whether the duration satisfies a threshold. In some cases, the memory device may store an indication of when (e.g., each time) the duration satisfied the threshold. The memory device may store the one or more indications in one or more non-volatile storage elements, such as fuses, which may enable the memory device to maintain a persistent indication of a cumulative duration over which the memory device is operated with operating conditions outside of the range.

公开(公告)号：US20230028176A1

公开(公告)日：2023-01-26

申请号：US17956551

申请日：2022-09-29

Applicant: Micron Technology, Inc.

Inventor： Debra M Bell ,  Kristen M. Hopper ,  Erika Prosser ,  Aaron P. Boehm

IPC: G06F11/07 ,  G06F3/06 ,  G06F1/30 ,  G06F1/20 ,  G06F11/30

Abstract: Methods, systems, and devices for persistent health monitoring for volatile memory devices are described. A memory device may determine that an operating condition associated with an array of memory cells on the device, such as a temperature, current, voltage, or other metric of health status is outside of a range associated with a risk of device degradation. The memory device may monitor a duration over which the operating condition is outside of the range, and may determine whether the duration satisfies a threshold. In some cases, the memory device may store an indication of when (e.g., each time) the duration satisfied the threshold. The memory device may store the one or more indications in one or more non-volatile storage elements, such as fuses, which may enable the memory device to maintain a persistent indication of a cumulative duration over which the memory device is operated with operating conditions outside of the range.

公开(公告)号：US11481265B2

公开(公告)日：2022-10-25

申请号：US16433820

申请日：2019-06-06

Applicant: Micron Technology, Inc.

Inventor： Debra M. Bell ,  Kristen M. Hopper ,  Erika Prosser ,  Aaron P. Boehm

IPC: G06F11/00 ,  G06F11/07 ,  G06F3/06 ,  G06F1/30 ,  G06F1/20 ,  G06F11/30

Abstract: Methods, systems, and devices for persistent health monitoring for volatile memory devices are described. A memory device may determine that an operating condition associated with an array of memory cells on the device, such as a temperature, current, voltage, or other metric of health status is outside of a range associated with a risk of device degradation. The memory device may monitor a duration over which the operating condition is outside of the range, and may determine whether the duration satisfies a threshold. In some cases, the memory device may store an indication of when (e.g., each time) the duration satisfied the threshold. The memory device may store the one or more indications in one or more non-volatile storage elements, such as fuses, which may enable the memory device to maintain a persistent indication of a cumulative duration over which the memory device is operated with operating conditions outside of the range.

公开(公告)号：US20210098046A1

公开(公告)日：2021-04-01

申请号：US17076575

申请日：2020-10-21

Applicant: Micron Technology, Inc

Inventor： Kristen M. Hopper ,  Debra M. Bell ,  Aaron P. Boehm

IPC: G11C11/22 ,  G11C11/4074 ,  G06F11/34 ,  G06F11/30 ,  G11C11/4076

Abstract: Methods, systems, and devices for a current monitor for a memory device are described. A memory device may monitor potential degradation of memory cells on the device by monitoring the amount of current drawn by one or more memory cells. As the memory cells degrade, the current supplied to the memory cells may change (e.g., increase due to additional leakage current. The memory device may indirectly monitor changes in the current supplied to the memory cells by monitoring a voltage of a node of a transistor that controls the amount of current supplied to the array of memory cells. The voltage at the control node may be compared to a reference voltage to determine whether the two voltages differ by a threshold amount, indicating that the memory cells are drawing more current. The memory device may output a status indicator when the voltages differ, for example, by the threshold amount.

公开(公告)号：US11257534B2

公开(公告)日：2022-02-22

申请号：US17076575

申请日：2020-10-21

Applicant: Micron Technology, Inc.

Inventor： Kristen M. Hopper ,  Debra M. Bell ,  Aaron P. Boehm

IPC: G11C11/24 ,  G11C11/22 ,  G11C11/4074 ,  G06F11/34 ,  G06F11/30 ,  G11C11/4076

Abstract: Methods, systems, and devices for a current monitor for a memory device are described. A memory device may monitor potential degradation of memory cells on the device by monitoring the amount of current drawn by one or more memory cells. As the memory cells degrade, the current supplied to the memory cells may change (e.g., increase due to additional leakage current. The memory device may indirectly monitor changes in the current supplied to the memory cells by monitoring a voltage of a node of a transistor that controls the amount of current supplied to the array of memory cells. The voltage at the control node may be compared to a reference voltage to determine whether the two voltages differ by a threshold amount, indicating that the memory cells are drawing more current. The memory device may output a status indicator when the voltages differ, for example, by the threshold amount.

公开(公告)号：US10832754B1

公开(公告)日：2020-11-10

申请号：US16433871

申请日：2019-06-06

Applicant: Micron Technology, Inc.

Inventor： Kristen M. Hopper ,  Debra M. Bell ,  Aaron P. Boehm

IPC: G11C5/14 ,  G11C11/22 ,  G11C11/4074 ,  G06F11/34 ,  G06F11/30 ,  G11C11/4076

Abstract: Methods, systems, and devices for a current monitor for a memory device are described. A memory device may monitor potential degradation of memory cells on the device by monitoring the amount of current drawn by one or more memory cells. As the memory cells degrade, the current supplied to the memory cells may change (e.g., increase due to additional leakage current. The memory device may indirectly monitor changes in the current supplied to the memory cells by monitoring a voltage of a node of a transistor that controls the amount of current supplied to the array of memory cells. The voltage at the control node may be compared to a reference voltage to determine whether the two voltages differ by a threshold amount, indicating that the memory cells are drawing more current. The memory device may output a status indicator when the voltages differ, for example, by the threshold amount.