公开(公告)号：US20240319886A1

公开(公告)日：2024-09-26

申请号：US18421893

申请日：2024-01-24

Applicant: Micron Technology, Inc.

Inventor： Peng Zhang ,  Lei Lin ,  Hanping Chen ,  Li-Te Chang ,  Zhengang Chen ,  Murong Lang ,  Zhenming Zhou

IPC: G06F3/06

CPC classification number: G06F3/0614 ,  G06F3/0652 ,  G06F3/0679

Abstract: A method for receiving a request for performing a programming operation on one or more memory blocks of a memory device, identifying a value of a media endurance metric associated with the one or more memory blocks, determining a programming voltage offset corresponding to the value of the media endurance metric, and performing, using the programming voltage offset, the programming operation on the one or more memory blocks. The method further includes identifying a program-verify voltage level associated with the one or more memory blocks, determining a program-verify voltage offset associated with the program-verify voltage level and the value of the media endurance metric, and performing, using the program-verify voltage level and the program-verify voltage offset, a program-verify operation on the one or more memory blocks.

公开(公告)号：US20240248612A1

公开(公告)日：2024-07-25

申请号：US18406852

申请日：2024-01-08

Applicant: Micron Technology, Inc.

Inventor： Lei Lin ,  Peng Zhang ,  Pitamber Shukla ,  Zhengang Chen ,  Zhenming Zhou

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679

Abstract: Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to modify pulses used to program memory components. The controller receives a request to program data in an individual memory component of a set of memory components. The controller computes a plurality of memory reliability criteria associated with the individual memory component and compares the plurality of memory reliability criteria to one or more threshold values. The controller selects a program pulse used to program the data to the individual memory component based on a result of comparing the plurality of memory reliability criteria to the one or more threshold values.

公开(公告)号：US20240420784A1

公开(公告)日：2024-12-19

申请号：US18739769

申请日：2024-06-11

Applicant: Micron Technology, Inc.

Inventor： Murong Lang ,  Peng Zhang ,  Lei Lin ,  Zhenming Zhou ,  Jun Wan

IPC: G11C16/34 ,  G11C16/10

Abstract: Aspects of the present disclosure configure a memory sub-system controller to selectively adjust a program pulse for different word line groups of a memory sub-system. The controller receives a request to program data to an individual memory component of a set of memory components. The controller determines that a program erase count (PEC) associated with the individual memory component transgresses a threshold value. The controller, in response to determining that the PEC associated with the individual memory component transgresses the threshold value, selectively adjusts a predetermined program voltage (Vpgm) associated with a subset of word lines (WLs) of the individual memory component based on whether the subset of WLs is associated with an individual WL group (WLG). The controller programs the data to the individual memory component according to the selectively adjusted predetermined Vpgm.

公开(公告)号：US20240371450A1

公开(公告)日：2024-11-07

申请号：US18637412

申请日：2024-04-16

Applicant: Micron Technology, Inc.

Inventor： Peng Zhang ,  Lei Lin ,  Zhengang Chen ,  Murong Lang ,  Zhenming Zhou

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/26

Abstract: A system including a memory device and an operatively coupled processing device to perform operations including: responsive to detecting a power-up event, performing a first read strobe on a first set of a plurality of memory cells addressable by a first wordline, determining a value of a conductivity metric reflecting conductive states of one or more bitlines connected to the first set of the plurality of memory cells, determining, based on the value of the conductivity metric, a read level offset value for a second wordline, wherein the second wordline is adjacent to the first wordline, performing, using the read level offset value, a second read strobe on the second wordline, and responsive to determining that a value of a quality metric produced by the second read strobe satisfies a quality criterion, indicating that a programming operation performed on the second wordline was completed before a power off event.