公开(公告)号：US20240055350A1

公开(公告)日：2024-02-15

申请号：US17819538

申请日：2022-08-12

Applicant: Micron Technology, Inc.

Inventor： Mark S. Swenson ,  Surendranath C. Eruvuru ,  Lifang Xu

IPC: H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/53295 ,  H01L21/76837

Abstract: An electronic device comprises a stack comprising an alternating sequence of conductive structures and insulative structures arranged in tiers, and at least one dielectric-filled slot extending vertically through the stack and extending in a first horizontal direction. The at least one dielectric-filled slot is defined between two internal sidewalls of the stack. The electronic device comprises additional dielectric-filled slots extending vertically through the stack and extending in a second horizontal direction transverse to the first horizontal direction, and isolation structures laterally interposed between the at least one dielectric-filled slot and the additional dielectric-filled slots. The isolation structures are laterally adjacent to the conductive structures of the stack, and at least some of the isolation structures are vertically adjacent to the insulative structures of the stack. Related systems and methods of forming the electronic devices are also disclosed.