公开(公告)号：US20200211912A1

公开(公告)日：2020-07-02

申请号：US16233728

申请日：2018-12-27

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu ,  Lisa R. Copenspire-Ross ,  Michael D. Kenney

IPC: H01L21/66 ,  H01L23/00 ,  G01N21/95

Abstract: Semiconductor devices having measurement features and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a plurality of stacked semiconductor dies each having measurement features formed along an outer periphery of a surface thereof. One or more image capture devices can image the semiconductor device and a controller can detect the measurement features in imaging data received from the image capture devices. The controller can further determine the distance between two or more of the measurement features to estimate a bond line thickness between semiconductor dies in the stack.

公开(公告)号：US20210225715A1

公开(公告)日：2021-07-22

申请号：US17207989

申请日：2021-03-22

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu ,  Lisa R. Copenspire-Ross ,  Michael D. Kenney

IPC: H01L21/66 ,  G01N21/95 ,  H01L23/00

Abstract: Semiconductor devices having measurement features and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a plurality of stacked semiconductor dies each having measurement features formed along an outer periphery of a surface thereof. One or more image capture devices can image the semiconductor device and a controller can detect the measurement features in imaging data received from the image capture devices. The controller can further determine the distance between two or more of the measurement features to estimate a bond line thickness between semiconductor dies in the stack.

公开(公告)号：US10971409B2

公开(公告)日：2021-04-06

申请号：US16233728

申请日：2018-12-27

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu ,  Lisa R. Copenspire-Ross ,  Michael D. Kenney

IPC: H01L23/58 ,  H01L21/66 ,  G01N21/95 ,  H01L23/00

Abstract: Semiconductor devices having measurement features and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a plurality of stacked semiconductor dies each having measurement features formed along an outer periphery of a surface thereof. One or more image capture devices can image the semiconductor device and a controller can detect the measurement features in imaging data received from the image capture devices. The controller can further determine the distance between two or more of the measurement features to estimate a bond line thickness between semiconductor dies in the stack.