公开(公告)号：US20240071468A1

公开(公告)日：2024-02-29

申请号：US17893672

申请日：2022-08-23

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum SIMSEK-EGE ,  Mingdong CUI

IPC: G11C11/408 ,  G11C11/22 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: G11C11/4085 ,  G11C11/2257 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1441

Abstract: Methods, systems, and devices for word line drivers for multiple-die memory devices are described. A memory device may include a first semiconductor die associated with at least memory cells and corresponding access lines of the memory device, and a second semiconductor die associated with at least access line driver circuitry of the memory device. The second semiconductor die may be located in contact with or otherwise adjacent to the first semiconductor die, and electrical contacts may be formed to couple the access line driver circuitry of the second semiconductor die with the access line conductors of the first semiconductor die. For example, cavities may be formed through the second semiconductor die and at least a portion of the first semiconductor die, and the electrical contacts may be formed between the semiconductor dies at least in part from forming a conductive material in the cavities.