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公开(公告)号:US20250025117A1
公开(公告)日:2025-01-23
申请号:US18909407
申请日:2024-10-08
Applicant: Micron Technology, Inc.
Inventor: Yashvi SINGH , Tanya KHATRI , Fatma Arzum SIMSEK-EGE , Yanni WANG
Abstract: In some implementations, a device may produce, via an x-ray module, x-rays to be directed towards a body part. The device may detect, via a sensor, the x-rays reflected from the body part. The device may generate, via the sensor, signals based on the x-rays reflected from the body part. The device may generate, via a processor, an x-ray image of the body part based on the first signals. The device may transmit the x-ray image to a server. The device may receive, from the server, a message that indicates a diagnosis associated with the x-ray image. The device may display, via a user interface, the x-ray image and information associated with the diagnosis associated with the x-ray image.
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公开(公告)号:US20230200762A1
公开(公告)日:2023-06-29
申请号:US17652910
申请日:2022-02-28
Applicant: Micron Technology, Inc.
Inventor: Yashvi SINGH , Tanya KHATRI , Fatma Arzum SIMSEK-EGE , Yanni WANG
IPC: A61B6/00
CPC classification number: A61B6/4405 , A61B6/5205 , A61B6/5217 , A61B6/563 , A61B6/4411 , A61B6/463 , A61B6/547
Abstract: In some implementations, a device may produce, via an x-ray module, x-rays to be directed towards a body part. The device may detect, via a sensor, the x-rays reflected from the body part. The device may generate, via the sensor, signals based on the x-rays reflected from the body part. The device may generate, via a processor, an x-ray image of the body part based on the first signals. The device may transmit the x-ray image to a server. The device may receive, from the server, a message that indicates a diagnosis associated with the x-ray image. The device may display, via a user interface, the x-ray image and information associated with the diagnosis associated with the x-ray image.
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公开(公告)号:US20240071468A1
公开(公告)日:2024-02-29
申请号:US17893672
申请日:2022-08-23
Applicant: Micron Technology, Inc.
Inventor: Fatma Arzum SIMSEK-EGE , Mingdong CUI
IPC: G11C11/408 , G11C11/22 , H01L23/00 , H01L25/00 , H01L25/065 , H01L25/18
CPC classification number: G11C11/4085 , G11C11/2257 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2224/08145 , H01L2224/80895 , H01L2224/80896 , H01L2924/1431 , H01L2924/1436 , H01L2924/1441
Abstract: Methods, systems, and devices for word line drivers for multiple-die memory devices are described. A memory device may include a first semiconductor die associated with at least memory cells and corresponding access lines of the memory device, and a second semiconductor die associated with at least access line driver circuitry of the memory device. The second semiconductor die may be located in contact with or otherwise adjacent to the first semiconductor die, and electrical contacts may be formed to couple the access line driver circuitry of the second semiconductor die with the access line conductors of the first semiconductor die. For example, cavities may be formed through the second semiconductor die and at least a portion of the first semiconductor die, and the electrical contacts may be formed between the semiconductor dies at least in part from forming a conductive material in the cavities.
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公开(公告)号:US20230397433A1
公开(公告)日:2023-12-07
申请号:US17805586
申请日:2022-06-06
Applicant: Micron Technology, Inc.
Inventor: Fatma Arzum SIMSEK-EGE , Ashonita A. CHAVAN
IPC: H01L27/11507 , H01L27/1159
CPC classification number: H01L27/11507 , H01L27/1159 , H01L27/11504
Abstract: Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, a memory device includes multiple memory cells. Each memory cell may include a bottom electrode having an open top cylinder shape that contains a support pillar, may include a top electrode, may include an insulator that separates the top electrode from the bottom electrode, and may include a leaker device having an open top cylinder shape. A bottom surface of the leaker device may abut at least one of a top surface of the bottom electrode or a top surface of the support pillar. A top surface of the leaker device may abut a bottom surface of a conductive plate. The memory device may also include the conductive plate.
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