公开(公告)号：US20240272823A1

公开(公告)日：2024-08-15

申请号：US18434445

申请日：2024-02-06

Applicant: Micron Technology, Inc.

Inventor： Mohammad Ehsanul Kabir ,  Timothy Hollis

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0673

Abstract: An example apparatus can include a dual-rank dual-inline memory module (DIMM) device. The dual-rank DIMM device can include a plurality of dual-rank memory chip sets and each includes a first-ranked memory chip and a second-ranked memory chip. Each of the plurality of dual-rank memory chip sets can be positioned on a same side of the dual-rank DIMM device.