公开(公告)号：US20250004789A1

公开(公告)日：2025-01-02

申请号：US18747227

申请日：2024-06-18

Applicant: Micron Technology, Inc.

Inventor： Keng Gee Ng ,  Mohammed Musaiyab Tarapati ,  Shyam Sunder Raghunathan

IPC: G06F9/4401

Abstract: Control logic in a memory device initiates application of a program pulse on a memory array of a memory device as part of a program operation and determines whether a first request to suspend the program operation was received during the application of the program pulse. Responsive to determining that the first request to suspend the program operation was received during the application of the program pulse, the control logic sets a program suspend indicator to a suspend state. Responsive to completing application of the program pulse, the control logic initiates a program verify operation on the memory array, and responsive to completing the program verify operation, determines that the program suspend indicator is set to the suspend state and suspends the program operation.

公开(公告)号：US20240143179A1

公开(公告)日：2024-05-02

申请号：US18489775

申请日：2023-10-18

Applicant: Micron Technology, Inc.

Inventor： Keng Gee Ng ,  Mohammed Musaiyab Tarapati

IPC: G06F3/06

CPC classification number: G06F3/0611 ,  G06F3/0659 ,  G06F3/0679

Abstract: Control logic in a memory device, responsive to receiving a request to resume a previously suspended memory access operation, initiates a program verify operation on a memory cell of the memory device, such as a memory cell that was at least partially programmed during the previously suspended memory access operation. The control logic further determines whether the memory cell passes the program verify operation. Responsive to determining that the memory cell does not pass the program verify operation, the control logic identifies a program level group of a plurality of program level groups with which the memory cell is associated and determines a resume program offset value associated with the program level group, wherein each of the plurality of program level groups has a different respective resume program offset value. The control logic can further cause a programming pulse to be applied to the memory cell to resume the previously suspended memory access operation, wherein a magnitude of the programming pulse is based on the resume program offset value associated with the program level group.