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    Memory cells
    2.
    发明授权
    Memory cells 有权
    记忆单元

    公开(公告)号：US08629421B1

    公开(公告)日：2014-01-14

    申请号：US13652286

    申请日：2012-10-15

    Applicant: Micron Technology, Inc.

    Inventor： D.V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

    IPC: H01L29/02

    CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

    Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

    MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS
    3.
    发明申请
    MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20140231743A1

    公开(公告)日：2014-08-21

    申请号：US14259376

    申请日：2014-04-23

    Applicant: Micron Technology, Inc.

    Inventor： D. V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

    IPC: H01L45/00

    CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

    Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

    Memory cells and methods of forming memory cells
    4.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US08753919B2

    公开(公告)日：2014-06-17

    申请号：US14105051

    申请日：2013-12-12

    Applicant: Micron Technology, Inc.

    Inventor： D. V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

    IPC: H01L29/02

    CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

    Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

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