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    Voltage switching in a memory device
    1.
    发明授权
    Voltage switching in a memory device 有权
    存储器件中的电压切换

    公开(公告)号：US08610490B2

    公开(公告)日：2013-12-17

    申请号：US13849586

    申请日：2013-03-25

    Applicant: Micron Technology, Inc.

    Inventor： Giulio G. Marotta ,  Carlo Musilli ,  Stefano Perugini ,  Alessandro Torsi ,  Tommaso Vali

    IPC: H03K17/687

    CPC classification number: G11C7/12 ,  H03K3/35613 ,  H03K19/018528

    Abstract: Voltage switches, memory devices, memory systems, and methods for switching are disclosed. One such voltage switch uses a pair of switch circuits coupled in series, each switch circuit being driven by a level shift circuit. Each switch circuit uses a group of series coupled transistors with a parallel control transistor where the number of transistors in each group may be determined by an expected switch input voltage and a maximum allowable voltage drop for each transistor. A voltage of a particular state of an enable signal is shifted up to the switch input voltage by the level shift circuits. The particular state of the enable signal turns on the voltage switch such that the switch output voltage is substantially equal to the switch input voltage.

    Abstract translation: 公开了电压开关，存储器件，存储器系统和用于切换的方法。 一个这样的电压开关使用串联耦合的一对开关电路，每个开关电路由电平移位电路驱动。 每个开关电路使用具有并联控制晶体管的一组串联耦合晶体管，其中每组中的晶体管数量可由每个晶体管的预期开关输入电压和最大允许电压降确定。 使能信号的特定状态的电压由电平移位电路移动到开关输入电压。 使能信号的特定状态使电压开关导通，使得开关输出电压基本上等于开关输入电压。

    APPARATUSES AND METHODS FOR DETERMINING STABILITY OF A MEMORY CELL
    2.
    发明申请
    APPARATUSES AND METHODS FOR DETERMINING STABILITY OF A MEMORY CELL 审中-公开
    用于确定记忆细胞稳定性的装置和方法

    公开(公告)号：US20140334223A1

    公开(公告)日：2014-11-13

    申请号：US14337989

    申请日：2014-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Alessandro Torsi

    IPC: G11C13/00 ,  G11C29/00

    CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0064 ,  G11C29/00 ,  G11C2013/0073 ,  G11C2013/0076 ,  G11C2013/0092

    Abstract: Examples described include apparatuses and methods for determining stability of memory cells. Resistance variable memory cells may be used. Once a memory cell is placed in a low or high resistance state responsive to set or reset pulses, the stability of the state may be determined, such as by providing another pulse to the memory cell or otherwise stressing the cell. The another pulse may be of an opposite polarity to the set or reset pulses already applied. If the memory cell is no longer in the target state after providing the another pulse, additional set or reset pulses may be applied to achieve a stable state.

    Abstract translation: 所描述的示例包括用于确定存储器单元的稳定性的装置和方法。 可以使用电阻可变存储单元。 一旦存储单元响应于置位或复位脉冲被置于低电阻或高电阻状态，则可以确定状态的稳定性，例如通过向存储器单元提供另一脉冲或以其他方式强调电池。 另一个脉冲可能具有与已经施加的置位或复位脉冲相反的极性。 如果在提供另一个脉冲之后存储单元不再处于目标状态，则可以施加额外的设置或复位脉冲以实现稳定状态。

    Apparatuses and methods for determining stability of a memory cell
    3.
    发明授权
    Apparatuses and methods for determining stability of a memory cell 有权

    公开(公告)号：US10515696B2

    公开(公告)日：2019-12-24

    申请号：US14337989

    申请日：2014-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Alessandro Torsi

    IPC: G11C13/00 ,  G11C29/00

    Abstract: Examples described include apparatuses and methods for determining stability of memory cells. Resistance variable memory cells may be used. Once a memory cell is placed in a low or high resistance state responsive to set or reset pulses, the stability of the state may be determined, such as by providing another pulse to the memory cell or otherwise stressing the cell. The another pulse may be of an opposite polarity to the set or reset pulses already applied. If the memory cell is no longer in the target state after providing the another pulse, additional set or reset pulses may be applied to achieve a stable state.

    Memory cells
    7.
    发明授权
    Memory cells 有权
    记忆单元

    公开(公告)号：US08629421B1

    公开(公告)日：2014-01-14

    申请号：US13652286

    申请日：2012-10-15

    Applicant: Micron Technology, Inc.

    Inventor： D.V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

    IPC: H01L29/02

    CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

    Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

    MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS
    8.
    发明申请
    MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20140231743A1

    公开(公告)日：2014-08-21

    申请号：US14259376

    申请日：2014-04-23

    Applicant: Micron Technology, Inc.

    Inventor： D. V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

    IPC: H01L45/00

    CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

    Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

    Memory cells and methods of forming memory cells
    9.
    发明授权
    Memory cells and methods of forming memory cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US08753919B2

    公开(公告)日：2014-06-17

    申请号：US14105051

    申请日：2013-12-12

    Applicant: Micron Technology, Inc.

    Inventor： D. V. Nirmal Ramaswamy ,  Murali Balakrishnan ,  Alessandro Torsi ,  Noel Rocklein

    IPC: H01L29/02

    CPC classification number: H01L45/1641 ,  G11C13/0007 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/145

    Abstract: Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour.

    Abstract translation: 一些实施例包括在一对电极之间具有可编程材料的存储器单元。 可编程材料包括选自由金属与硅的比例在约2至约6范围内的金属硅酸盐和金属与铝的比例在约2范围内的金属的材料 一些实施例包括形成存储器单元的方法。 形成第一电极材料。 可编程材料形成在第一电极材料上，可编程材料包括金属硅酸盐和/或金属铝酸盐。 在可编程材料上形成第二电极材料，然后在约300℃至约500℃的温度范围内进行约1分钟至约1小时的退火。

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