公开(公告)号：US20240071506A1

公开(公告)日：2024-02-29

申请号：US17823191

申请日：2022-08-30

Applicant: Micron Technology, Inc.

Inventor： Zhongguang XU ,  Murong LANG ,  Zhenming ZHOU ,  Ugo RUSSO ,  Niccolo' RIGHETTI ,  Nicola CIOCCHINI

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/16 ,  G11C16/28

CPC classification number: G11C16/102 ,  G11C16/08 ,  G11C16/16 ,  G11C16/28

Abstract: A memory device may include a memory and a controller. The controller may be configured to receive a read command associated with a block of the memory. The controller may be configured to determine a block type associated with the block. The controller may be configured to identify, based on the block type, one or more read voltage offsets for a read operation associated with the block. The controller may be configured to perform the read operation based on the one or more read voltage offsets.