公开(公告)号：US20240194270A1

公开(公告)日：2024-06-13

申请号：US18528337

申请日：2023-12-04

Applicant: Micron Technology, Inc.

Inventor： Qun Su ,  Pitamber Shukla ,  Ryan Hrinya ,  Fulvio Rori ,  Jose Nino N. Monje

IPC: G11C16/16 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/16 ,  G11C16/0483 ,  G11C16/08

Abstract: A method includes determining that a first group of word lines associated with a block of memory cells are in a programmed state and determining that a second group of word lines associated with the block of memory cells are in an unprogrammed state. The method further includes applying a first debiasing voltage to the first group of word lines based on the determination that the first group of word lines are in the programmed state and applying a second debiasing voltage to the second group of word lines based on the determination that the second group of word lines are in the unprogrammed state.

公开(公告)号：US20240412803A1

公开(公告)日：2024-12-12

申请号：US18676267

申请日：2024-05-28

Applicant: Micron Technology, Inc.

Inventor： Qun Su ,  Pitamber Shukla

IPC: G11C29/46 ,  G11C29/12

Abstract: Exemplary methods, apparatuses, and systems write data to a first wordline of a partially programmed block of memory. A second wordline of the block is determined to fail to satisfy a first margin threshold by comparing a first voltage threshold of the second wordline to a reference voltage. In response to the second wordline failing to satisfy the first margin threshold, a second margin test is applied to the block. In response to determining the block passed the second margin test, data is written in a subsequent write operation to the block using an adjusted trim setting.