公开(公告)号：US20240071832A1

公开(公告)日：2024-02-29

申请号：US17899166

申请日：2022-08-30

Applicant: Micron Technology, Inc

Inventor： Ronald Allen Weimer ,  Toshihiko Miyashita ,  Dan Mihai Mocuta ,  Christopher W. Petz

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/285 ,  H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L21/823814 ,  H01L21/02532 ,  H01L21/28518 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/7848

Abstract: A variety of applications can include apparatus having p-channel metal-oxide-semiconductor (PMOS) transistors and n-channel metal-oxide-semiconductor (NMOS) transistors with different metal silicide contacts. The active area of the NMOS transistor can include a first metal silicide having a first metal element, where the first metal silicide is a vertical lowest portion of a contact for the NMOS. The PMOS transistor can include a stressor source/drain region to a channel region of the PMOS transistor and a second metal silicide directly contacting the stressor source/drain region without containing the first metal element. The process flow to form the PMOS and NMOS transistors can enable making simultaneous contacts by a pre-silicide in the active area of the NMOS transistor, without affecting stressor source/drain regions in the PMOS transistor. The process flow and resulting structures for PMOS transistors and NMOS transistors can be used in various integrated circuits and devices.

公开(公告)号：US20240064987A1

公开(公告)日：2024-02-22

申请号：US17888650

申请日：2022-08-16

Applicant: Micron Technology, Inc.

Inventor： Toshihiko Miyashita ,  Ronald Allen Weimer ,  Dan Mihai Mocuta

IPC: H01L27/11573 ,  H01L29/45 ,  H01L29/78 ,  H01L27/11529

CPC classification number: H01L27/11573 ,  H01L29/45 ,  H01L29/7843 ,  H01L27/11529

Abstract: Apparatus and methods are disclosed, including transistors, semiconductor devices and systems. Example semiconductor devices and methods include silicide contacts on source/drain regions in different conductivity type transistors. In one example, silicide contacts are different between transistors of different conductivity types.