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公开(公告)号:US12068017B2
公开(公告)日:2024-08-20
申请号:US17647151
申请日:2022-01-05
Applicant: Micron Technology, Inc.
Inventor: Ruyan Xue , Weilu Chu , Zhiqi Huang
IPC: G11C16/04 , G06F3/06 , G11C11/22 , G11C11/407 , H03F3/45 , H03K17/687
CPC classification number: G11C11/407 , G06F3/0604 , G06F3/0655 , G06F3/0679 , G11C11/225 , H03F3/45269 , H03F3/45273 , H03K17/6872 , H03K17/6874 , G11C11/221
Abstract: Methods, systems, and devices for configurable input for an amplifier are described. In some examples, a circuit may be configured to operate based on a signal having a first voltage profile or a second voltage profile. For example, the first voltage profile may be associated with a range of voltages that are based on a temperature of an associated memory chip, and the second voltage profile may be associated with a voltage (or voltages) that are not associated with the temperature of the memory chip. The circuit may include one or more transistors and switches that are activated based on the voltage profile and a switch receiving a particular control signal. In some instances, the control signal may be received based on a value stored to one or more non-volatile memory elements.
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公开(公告)号:US20230215487A1
公开(公告)日:2023-07-06
申请号:US17647151
申请日:2022-01-05
Applicant: Micron Technology, Inc.
Inventor: Ruyan Xue , Weilu Chu , Zhiqi Huang
IPC: G11C11/407 , H03K17/687 , G11C11/22 , H03F3/45 , G06F3/06
CPC classification number: G11C11/407 , H03K17/6872 , H03K17/6874 , G11C11/225 , H03F3/45273 , H03F3/45269 , G06F3/0655 , G06F3/0604 , G06F3/0679 , G11C11/221
Abstract: Methods, systems, and devices for configurable input for an amplifier are described. In some examples, a circuit may be configured to operate based on a signal having a first voltage profile or a second voltage profile. For example, the first voltage profile may be associated with a range of voltages that are based on a temperature of an associated memory chip, and the second voltage profile may be associated with a voltage (or voltages) that are not associated with the temperature of the memory chip. The circuit may include one or more transistors and switches that are activated based on the voltage profile and a switch receiving a particular control signal. In some instances, the control signal may be received based on a value stored to one or more non-volatile memory elements.
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