公开(公告)号：US20230197157A1

公开(公告)日：2023-06-22

申请号：US17741189

申请日：2022-05-10

Applicant: Micron Technology, Inc.

Inventor： Sandeep Kadasani ,  Pitamber Shukla ,  Scott A. Stoller ,  Renato Padilla ,  Chi Ming Chu

IPC: G11C16/08 ,  G11C16/34 ,  G11C16/30

CPC classification number: G11C16/08 ,  G11C16/30 ,  G11C16/3495

Abstract: A method includes determining, for a set of memory cells of a word line group, a parameter corresponding to a quality of the set of memory cells of the word line group and determining, for the set of memory cells, a range of voltage offset values corresponding to the parameter. The method can further include determining a voltage offset to be applied to the set of memory cells of the word line group based on the parameter or the range of voltage offset values, or both and applying a signal corresponding to the determined voltage offset to the set of memory cells of the word line group.