公开(公告)号：US20030001212A1

公开(公告)日：2003-01-02

申请号：US10231758

申请日：2002-08-29

Applicant: Micron Technology, Inc.

Inventor： Yongjun Hu ,  Randhir P.S. Thakur ,  Scott DeBoer

IPC: H01L029/76

CPC classification number: H01L21/28052 ,  H01L21/28061 ,  H01L27/10891 ,  H01L29/4941 ,  Y10S257/914 ,  Y10S257/915

Abstract: Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

公开(公告)号：US20040238845A1

公开(公告)日：2004-12-02

申请号：US10881630

申请日：2004-06-30

Applicant: Micron Technology. Inc.

Inventor： Yongjun Hu ,  Randhir P.S. Thakur ,  Scott DeBoer

IPC: H01L029/40

CPC classification number: H01L21/28052 ,  H01L21/28061 ,  H01L27/10891 ,  H01L29/4941 ,  Y10S257/914 ,  Y10S257/915

Abstract: Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.

Abstract translation: 用于形成字线堆叠的方法和装置包括形成耦合在底部硅层和导体层之间的薄氮化物层。 在另一个实施例中，扩散阻挡层耦合在薄氮化物层和底部硅层之间。 通过在含氮环境中退火氧化硅膜来形成薄氮化物层。