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公开(公告)号:US20200075620A1
公开(公告)日:2020-03-05
申请号:US16542675
申请日:2019-08-16
Applicant: Micron Technology, Inc.
Inventor: Nancy M. Lomeli , Tom George , Jordan D. Greenlee , Scott M. Pook , John Mark Meldrim
IPC: H01L27/11578 , H01L27/1157 , H01L27/11565 , G11C16/08
Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
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公开(公告)号:US20220037358A1
公开(公告)日:2022-02-03
申请号:US17502501
申请日:2021-10-15
Applicant: Micron Technology, Inc.
Inventor: Nancy M. Lomeli , Tom George , Jordan D. Greenlee , Scott M. Pook , John Mark Meldrim
IPC: H01L27/11582 , H01L29/10 , H01L23/535 , G11C16/04 , H01L21/768 , H01L21/02 , H01L27/11556 , H01L27/1157 , H01L27/11578 , G11C16/08 , H01L27/11565
Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
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公开(公告)号:US10424596B2
公开(公告)日:2019-09-24
申请号:US15852955
申请日:2017-12-22
Applicant: Micron Technology, Inc.
Inventor: Nancy M. Lomeli , Tom George , Jordan D. Greenlee , Scott M. Pook , John Mark Meldrim
IPC: H01L27/11582 , H01L29/10 , H01L23/535 , G11C16/04 , H01L21/768 , H01L21/02 , H01L27/11556 , H01L29/792 , H01L29/788
Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
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公开(公告)号:US11177276B2
公开(公告)日:2021-11-16
申请号:US16542675
申请日:2019-08-16
Applicant: Micron Technology, Inc.
Inventor: Nancy M. Lomeli , Tom George , Jordan D. Greenlee , Scott M. Pook , John Mark Meldrim
IPC: H01L27/11582 , H01L29/10 , H01L23/535 , G11C16/04 , H01L21/768 , H01L21/02 , G11C16/08 , H01L27/11556 , H01L27/1157 , H01L27/11578 , H01L27/11565 , H01L29/792 , H01L29/788
Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
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公开(公告)号:US20190198518A1
公开(公告)日:2019-06-27
申请号:US15852955
申请日:2017-12-22
Applicant: Micron Technology, Inc.
Inventor: Nancy M. Lomeli , Tom George , Jordan D. Greenlee , Scott M. Pook , John Mark Meldrim
IPC: H01L27/11582 , H01L29/10 , H01L23/535 , G11C16/04 , H01L21/768 , H01L21/02 , H01L27/11556
CPC classification number: H01L27/11582 , G11C16/0483 , H01L21/02532 , H01L21/76807 , H01L21/76843 , H01L21/76877 , H01L23/535 , H01L27/11556 , H01L29/1037 , H01L29/7883 , H01L29/7889 , H01L29/7926
Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
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