公开(公告)号：US20210193460A1

公开(公告)日：2021-06-24

申请号：US16723557

申请日：2019-12-20

Applicant: Micron Technology, Inc.

Inventor： Russell A. Benson ,  Silvia Borsari ,  Vinay Nair ,  Ying Rui ,  Somik Mukherjee

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

Abstract: Methods, apparatuses, and systems related to a semiconductor nitridation passivation are described. An example method includes performing a dry etch process on a semiconductor structure on a wafer in a semiconductor fabrication process. The method further includes performing a dry strip process on the semiconductor structure. The method further includes performing a first wet strip clean process on the semiconductor. The method further includes performing a second wet strip clean process on the semiconductor. The method further includes performing a nitridation passivation on the semiconductor structure to avoid oxidization of the semiconductor structure. The method further performing a spacer material deposition on the semiconductor structure.

公开(公告)号：US11189484B2

公开(公告)日：2021-11-30

申请号：US16723557

申请日：2019-12-20

Applicant: Micron Technology, Inc.

Inventor： Russell A. Benson ,  Silvia Borsari ,  Vinay Nair ,  Ying Rui ,  Somik Mukherjee

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/311

Abstract: Methods, apparatuses, and systems related to a semiconductor nitridation passivation are described. An example method includes performing a dry etch process on a semiconductor structure on a wafer in a semiconductor fabrication process. The method further includes performing a dry strip process on the semiconductor structure. The method further includes performing a first wet strip clean process on the semiconductor. The method further includes performing a second wet strip clean process on the semiconductor. The method further includes performing a nitridation passivation on the semiconductor structure to avoid oxidization of the semiconductor structure. The method further performing a spacer material deposition on the semiconductor structure.