公开(公告)号：US11262780B1

公开(公告)日：2022-03-01

申请号：US17096225

申请日：2020-11-12

Applicant: Micron Technology, Inc.

Inventor： Martin Brox ,  Satoru Sugimoto ,  Elena Cabrera Bernal ,  Jan Pottgiesser ,  Sven Piatkowski

IPC: G05F1/10 ,  G05F3/20 ,  G11C5/14

Abstract: Methods, systems, and devices for back-bias optimization are described. An apparatus, such as an electronic apparatus, may include a first substrate region and a second substrate region. The apparatus may also include a voltage generator that is disposed on the first substrate region and that includes an output terminal coupled with a conductive path. The apparatus may also include a set of clamp circuits disposed on the second substrate region. The set of clamp circuits may be configured selectively couple the conductive path with a voltage supply.