公开(公告)号：US12243579B2

公开(公告)日：2025-03-04

申请号：US17819724

申请日：2022-08-15

Applicant: Micron Technology, Inc.

Inventor： Yuko Watanabe ,  Takefumi Shirako

IPC: G11C11/4091

Abstract: Electrically conductive line side-by-side running distance equalization and related apparatuses and systems. An apparatus includes a first sense amplifier, a second sense amplifier, a first pair of lines, and a second pair of lines. The first sense amplifier includes a first pull-up sense amplifier and a first pull-down sense amplifier. The first pair of lines electrically connects a first pull-up sense amplifier of the first sense amplifier to a first pull-down sense amplifier of the first sense amplifier. The second pair of lines electrically connects the second pull-up sense amplifier to the second pull-down sense amplifier. Parallel running distances between lines of the first pair of lines and the second pair of lines are equalized by a wiring twist of the first pair of lines and three wiring twists of the second pair of lines.

公开(公告)号：US20220068351A1

公开(公告)日：2022-03-03

申请号：US17006730

申请日：2020-08-28

Applicant: Micron Technology, Inc.

Inventor： Takefumi Shirako ,  Masahiro Yokomichi ,  Kyuseok Lee ,  Sangmin Hwang

IPC: G11C11/408

Abstract: In some examples, a subword driver block of a memory device includes a plurality of active regions of a first type and a plurality of active regions of a second type adjacent to the plurality of active regions of the first type. The subword driver block further includes a plurality of first gate electrodes overlapping with the plurality of active regions of the first type to form a plurality of first transistors, and a plurality of second gate electrodes overlapping with the plurality of active regions of the first type to form a plurality of second transistors. Each of the second transistors is shared by a first subword driver and a second subword driver. Each of the second transistors may include a drain and a source respectively coupled to a first and second word line, which are driven by the first subword driver and the second subword driver, respectively.

公开(公告)号：US11450375B2

公开(公告)日：2022-09-20

申请号：US17006730

申请日：2020-08-28

Applicant: Micron Technology, Inc.

Inventor： Takefumi Shirako ,  Masahiro Yokomichi ,  Kyuseok Lee ,  Sangmin Hwang

IPC: G11C8/08 ,  G11C11/408 ,  G11C11/16 ,  G11C8/14 ,  G11C5/14

Abstract: In some examples, a subword driver block of a memory device includes a plurality of active regions of a first type and a plurality of active regions of a second type adjacent to the plurality of active regions of the first type. The subword driver block further includes a plurality of first gate electrodes overlapping with the plurality of active regions of the first type to form a plurality of first transistors, and a plurality of second gate electrodes overlapping with the plurality of active regions of the first type to form a plurality of second transistors. Each of the second transistors is shared by a first subword driver and a second subword driver. Each of the second transistors may include a drain and a source respectively coupled to a first and second word line, which are driven by the first subword driver and the second subword driver, respectively.

公开(公告)号：US20220392514A1

公开(公告)日：2022-12-08

申请号：US17819724

申请日：2022-08-15

Applicant: Micron Technology, Inc.

Inventor： Yuko Watanabe ,  Takefumi Shirako

IPC: G11C11/4091

Abstract: Electrically conductive line side-by-side running distance equalization and related apparatuses and systems. An apparatus includes a first sense amplifier, a second sense amplifier, a first pair of lines, and a second pair of lines. The first sense amplifier includes a first pull-up sense amplifier and a first pull-down sense amplifier. The first pair of lines electrically connects a first pull-up sense amplifier of the first sense amplifier to a first pull-down sense amplifier of the first sense amplifier. The second pair of lines electrically connects the second pull-up sense amplifier to the second pull-down sense amplifier. Parallel running distances between lines of the first pair of lines and the second pair of lines are equalized by a wiring twist of the first pair of lines and three wiring twists of the second pair of lines.

公开(公告)号：US11417389B2

公开(公告)日：2022-08-16

申请号：US16917233

申请日：2020-06-30

Applicant: Micron Technology, Inc.

Inventor： Yuko Watanabe ,  Takefumi Shirako

IPC: G11C11/4091

Abstract: Electrically conductive line side-by-side running distance equalization and related apparatuses and systems. An apparatus includes a first sense amplifier including a first pull-up sense amplifier, a first pull-down sense amplifier, and a first pair of lines connecting the first pull-up sense amplifier to the first pull-down sense amplifier. The apparatus also includes a second sense amplifier adjacent to the first sense amplifier. The second sense amplifier includes a second pull-up sense amplifier, a second pull-down sense amplifier, and a second pair of lines connecting the second pull-up sense amplifier to the second pull-down sense amplifier. Parallel running distances between lines of the first pair of lines and the second pair of lines are equalized by a wiring twist of at least one of the first pair of lines or the second pair of lines in a region of the first pull-up sense amplifier and the second pull-up sense amplifier.

公开(公告)号：US20250149081A1

公开(公告)日：2025-05-08

申请号：US19005707

申请日：2024-12-30

Applicant: Micron Technology, Inc.

Inventor： Yuko Watanabe ,  Takefumi Shirako

IPC: G11C11/4091

Abstract: Apparatuses and systems including sense amplifiers are disclosed. An apparatus may include a first pull-up sense amplifier, a first pull-down sense amplifier, and a first pair of lines electrically connecting the first pull-up sense amplifier to the first pull-down sense amplifier. The apparatus may further include a second pull-up sense amplifier, a second pull-down sense amplifier, and a second pair of lines including one or more wiring twists and electrically connecting the second pull-up sense amplifier to the second pull-down sense amplifier.

公开(公告)号：US20210407578A1

公开(公告)日：2021-12-30

申请号：US16917233

申请日：2020-06-30

Applicant: Micron Technology, Inc.

Inventor： Yuko Watanabe ,  Takefumi Shirako

IPC: G11C11/4091

Abstract: Electrically conductive line side-by-side running distance equalization and related apparatuses and systems. An apparatus includes a first sense amplifier including a first pull-up sense amplifier, a first pull-down sense amplifier, and a first pair of lines connecting the first pull-up sense amplifier to the first pull-down sense amplifier. The apparatus also includes a second sense amplifier adjacent to the first sense amplifier. The second sense amplifier includes a second pull-up sense amplifier, a second pull-down sense amplifier, and a second pair of lines connecting the second pull-up sense amplifier to the second pull-down sense amplifier. Parallel running distances between lines of the first pair of lines and the second pair of lines are equalized by a wiring twist of at least one of the first pair of lines or the second pair of lines in a region of the first pull-up sense amplifier and the second pull-up sense amplifier.