公开(公告)号：US20150140777A1

公开(公告)日：2015-05-21

申请号：US14607329

申请日：2015-01-28

Applicant: Micron Technology, Inc.

Inventor： Jerome A. Imonigie ,  Prashant Raghu ,  Theodore M. Taylor ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/1658 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1641

Abstract: Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises forming a chalcogenide material adjacent to and in contact with an insulative material, exposing the chalcogenide material and the insulative material to a transition metal solution, and diffusing transition metal of the transition metal solution into the chalcogenide material while substantially no transition metal diffuses into the insulative material. A method of doping a chalcogenide material of a memory cell with at least one transition metal without using an etch or chemical mechanical planarization process to remove the transition metal from an insulative material of the memory cell is also disclosed, wherein the chalcogenide material is not silver selenide.

Abstract translation: 选择性地形成金属掺杂的硫族化物材料的方法包括将硫族化物材料暴露于过渡金属溶液，并将过渡溶液的过渡金属掺入硫族化物材料中，而基本上不将过渡金属掺入相邻的材料中。 硫族化物材料不是硒化银。 另一种方法包括形成与绝缘材料相邻并与其接触的硫族化物材料，将硫族化物材料和绝缘材料暴露于过渡金属溶液，并将过渡金属溶液的过渡金属扩散到硫族化物材料中，同时基本上没有过渡金属扩散 进入绝缘材料。 还公开了一种使用至少一种过渡金属掺杂存储单元的硫族化物材料而不使用蚀刻或化学机械平坦化工艺以从存储器单元的绝缘材料除去过渡金属的方法，其中硫族化物材料不是银 硒化物

公开(公告)号：US09614153B2

公开(公告)日：2017-04-04

申请号：US14607329

申请日：2015-01-28

Applicant: Micron Technology, Inc.

Inventor： Jerome A. Imonigie ,  Prashant Raghu ,  Theodore M. Taylor ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/1658 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1641

Abstract: Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises forming a chalcogenide material adjacent to and in contact with an insulative material, exposing the chalcogenide material and the insulative material to a transition metal solution, and diffusing transition metal of the transition metal solution into the chalcogenide material while substantially no transition metal diffuses into the insulative material. A method of doping a chalcogenide material of a memory cell with at least one transition metal without using an etch or chemical mechanical planarization process to remove the transition metal from an insulative material of the memory cell is also disclosed, wherein the chalcogenide material is not silver selenide.

公开(公告)号：US20140077126A1

公开(公告)日：2014-03-20

申请号：US14084854

申请日：2013-11-20

Applicant: Micron Technology, Inc.

Inventor： Russell A. Benson ,  Theodore M. Taylor ,  Mark W. Kiehlbauch

IPC: C09K13/00

CPC classification number: C09K13/00 ,  H01L21/31116

Abstract: Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of C4F8 and/or C4F6, an oxygen source, and a carrier gas in combination with tetrafluoroethane (C2F4) or a halofluorocarbon analogue of C2F4.

Abstract translation: 提供了用于蚀刻介电层中的接触开口的蚀刻气体组合物。 该方法的实施例使用由C4F8和/或C4F6，氧源和与四氟乙烷（C2F4）或C2F4的卤代烃类似物组合的载气组成的蚀刻气体产生的等离子体。