公开(公告)号：US20240088072A1

公开(公告)日：2024-03-14

申请号：US17943580

申请日：2022-09-13

Applicant: Micron Technology, Inc.

Inventor： Tsung Han Chiang ,  Shin Yueh Yang

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05541 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/11462 ,  H01L2224/11831 ,  H01L2224/11845 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13018 ,  H01L2224/13147 ,  H01L2224/13541 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2924/1436 ,  H01L2924/35121

Abstract: Methods, apparatuses, and systems related to embedded metal pads are described. An example semiconductor device includes a dielectric material, a metal pad having side surface, where a lower portion of the side surface is embedded in the dielectric material, a mask material on a portion of a surface of the dielectric material, an upper portion of the side surface of the metal pad, and a portion of a top surface of the metal pad and a contact pillar on a second portion of the top surface of metal pad, the contact pillar comprising a metal pillar and a pillar bump.