公开(公告)号：US20250069952A1

公开(公告)日：2025-02-27

申请号：US18788846

申请日：2024-07-30

Applicant: Micron Technology, Inc.

Inventor： Vibhav Gupta ,  Wei Chang Mendoza Wong ,  Xinyun Chen ,  Raj K. Bansal ,  Teng Leong Tan

IPC: H01L21/78 ,  H01L23/00

Abstract: Systems and methods for mitigating crack meandering, are disclosed herein. In some embodiments, the method includes forming a metallic layer over planned scribe regions of an upper surface of a wafer, then selectively patterning and/or etching the metallic layer to form a plurality of isolated lines over the planned scribe regions. The method can then include depositing a passivation material over the plurality of isolated lines. Adjacent isolated lines can be separated from each other by a small enough distance to disrupt the deposition process, thereby creating a gap in the passivation material between each of the adjacent isolated lines. The gaps and/or trenches formed in the top surface of the wafer by etching the passivation material through the gaps can help attract cracks during a stealth dicing process, thereby reducing the amount the cracks meander away from the planned scribe regions.