公开(公告)号：US20240170069A1

公开(公告)日：2024-05-23

申请号：US18388930

申请日：2023-11-13

Applicant: Micron Technology, Inc.

Inventor： Hojung Yun ,  Xiaoxiao Zhang ,  Yizhou Zhu ,  Dheeraj Srinivasan

IPC: G11C16/10 ,  G06F9/445

CPC classification number: G11C16/10 ,  G06F9/44521

Abstract: A request to execute a programming operation to program a set of memory cells of the memory array is identified, where the programming operation comprises a set of prologue sub-operations and a set of program sub-operations. A loading process is caused to be executed to load data associated with the programming operation to the memory device. During the loading process, at least a portion of the prologue sub-operations associated with the programming operation are caused to be executed. Following completion of the loading process, the set of program sub-operations of the programming operation are caused to be executed.