公开(公告)号：US20180241203A1

公开(公告)日：2018-08-23

申请号：US15866508

申请日：2018-01-10

Applicant: Microsemi Corporation

Inventor： Pierre IRISSOU ,  Etienne COLMET-DAAGE

IPC: H02H9/02 ,  H02H5/04 ,  H02H3/08 ,  H02H3/30

CPC classification number: H02H9/025 ,  H02H3/06 ,  H02H3/085 ,  H02H3/305 ,  H02H5/048 ,  H04M2201/80

Abstract: An over-current protection apparatus constituted of: a transistor disposed on a substrate; a first thermal sense device arranged to sense a temperature reflective of a junction temperature of the transistor; a second thermal sense device arranged to sense a temperature reflective of a temperature of a casing surrounding the substrate; and a control circuitry, arranged to alternately: responsive to the sensed temperature by the first thermal sense device and the sensed temperature of the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is greater than a predetermined value, switch off the transistor; and responsive to the sensed temperature by the first thermal sense device and the sensed temperature by the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is not greater than the predetermined value, switch on the transistor.