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公开(公告)号：US12082512B2
公开(公告)日：2024-09-03
申请号：US16662586
申请日：2019-10-24
发明人： Georg Wolfgang Winkler , Roman Mykolayovych Lutchyn , Leonardus Petrus Kouwenhoven , Farhad Karimi
摘要： A semiconductor-superconductor hybrid device comprises a semiconductor layer and a superconductor layer. The superconductor layer is arranged over an edge of the semiconductor layer so as to enable energy level hybridisation between the semiconductor layer and the superconductor layer. The semiconductor layer is arranged in a sandwich structure between first and second insulating layers, each insulating layer being in contact with a respective opposed face of the semiconductor layer. This configuration may allow for good control over the geometry of the semiconductor layer and may improve tolerance to manufacturing variations. The device may be useful in a quantum computer. Also provided is a method of manufacturing the device, and a method of inducing topological behaviour in the device.
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公开(公告)号：US20240292761A1
公开(公告)日：2024-08-29
申请号：US18421830
申请日：2024-01-24
发明人： Georg Wolfgang Winkler , Roman Mykolayovych Lutchyn , Geoffrey Charles Gardner , Raymond Leonard Kallaher , Sergei Vyatcheslavovich Gronin , Michael James Manfra , Farhad Karimi
摘要： A semiconductor-superconductor hybrid device comprises a semiconductor, a superconductor, and a barrier between the superconductor and the semiconductor. The device is configured to enable energy level hybridisation between the semiconductor and the superconductor. The barrier is configured to increase a topological gap of the device. The barrier allows for control over the degree of hybridisation between the semiconductor and the superconductor. Further aspects provide a quantum computer comprising the device, a method of manufacturing the device, and a method of inducing topological behaviour in the device.
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公开(公告)号：US20210126181A1
公开(公告)日：2021-04-29
申请号：US16662611
申请日：2019-10-24
发明人： Georg Wolfgang Winkler , Roman Mykolayovych Lutchyn , Geoffrey Charles Gardner , Raymond Leonard Kallaher , Sergei Vyatcheslavovich Gronin , Michael James Manfra , Farhad Karimi
摘要： A semiconductor-superconductor hybrid device comprises a semiconductor, a superconductor, and a barrier between the superconductor and the semiconductor. The device is configured to enable energy level hybridisation between the semiconductor and the superconductor. The barrier is configured to increase a topological gap of the device. The barrier allows for control over the degree of hybridisation between the semiconductor and the superconductor. Further aspects provide a quantum computer comprising the device, a method of manufacturing the device, and a method of inducing topological behaviour in the device.
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公开(公告)号：US20210126180A1
公开(公告)日：2021-04-29
申请号：US16662586
申请日：2019-10-24
发明人： Georg Wolfgang Winkler , Roman Mykolayovych Lutchyn , Leonardus Petrus Kouwenhoven , Farhad Karimi
摘要： A semiconductor-superconductor hybrid device comprises a semiconductor layer and a superconductor layer. The superconductor layer is arranged over an edge of the semiconductor layer so as to enable energy level hybridisation between the semiconductor layer and the superconductor layer. The semiconductor layer is arranged in a sandwich structure between first and second insulating layers, each insulating layer being in contact with a respective opposed face of the semiconductor layer. This configuration may allow for good control over the geometry of the semiconductor layer and may improve tolerance to manufacturing variations. The device may be useful in a quantum computer. Also provided is a method of manufacturing the device, and a method of inducing topological behaviour in the device.
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